IPB120N04S4-04 OptiMOS -T2 Power-Transistor Product Summary Features V 40 V D S N- c hannel - Enhanc em ent m ode R 3.6 mW D S (o n ),m a x Autom otive AEC Q 101 qualif ied I 120 A D MSL1 up to 260C peak r ef low 175C oper ating tem per atur e PG - T O 263- 3- 2 G r een pac k age ( lead f r ee) 100% Avalanc he tes ted Type Package Ordering Code Marking IPB120N04S4- 04 PG - T O 263- 3- 2 - 4N0404 Maximum ratings, at T =25 C, unles s other wis e s pec if ied j Value Parameter Symbol Conditions Unit I T =25C, V =10V Continuous dr ain c ur r ent 120 A D C G S 1 ) T =100C, V =10V 91 C G S 1 ) I T =25C 480 Puls ed dr ain c ur r ent D ,p u ls e C Avalanc he ener gy, s ingle puls e E I =60A 75 m J A S D I Avalanc he c ur r ent, s ingle puls e - 120 A AS V G ate s our c e voltage - 20 V G S P T =25C Power dis s ipation 79 W to t C O per ating and s tor age tem per atur e T , T - - 55 ... +175 C j s tg IEC c lim atic c ategor y DIN IEC 68- 1 - 55/175/56 Rev. 1.1 page 1 2014- 04- 07IPB120N04S4-04 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics R T her m al r es is tanc e, j unc tion - c as e - - 1.9 K/W th J C T her m al r es is tanc e, j unc tion - R - - 62 th J A am bient, leaded SMD ver s ion, devic e on PCB R m inim al f ootpr int - - 62 th J A 2 2 ) - - 40 6 c m c ooling ar ea Electrical characteristics, at T =25 C, unles s other wis e s pec if ied j Static characteristics Dr ain- s our c e br eak down voltage V V =0V, I = 1m A 40 - - V (B R )D S S G S D G ate thr es hold voltage V V =V , I =40 A 2.0 3.0 4.0 G S (th ) D S G S D V =40V, V =0V, D S G S Z er o gate voltage dr ain c ur r ent I - 0.01 1 A D S S T =25C j V =18V, V =0V, D S G S - 3 36 2 ) T =85 C j G ate- s our c e leak age c ur r ent I V =20V, V =0V - - 100 nA G S S G S D S R V =10V, I =100A Dr ain- s our c e on- s tate r es is tanc e - 3.2 3.6 m DS(on) G S D Rev. 1.1 page 2 2014- 04- 07