IDW30S120FKSA1

SiC Silicon Carbide Diode TM thinQ SiC Schottky Diode 1200V SiC Schottky Diode ID W 3 0 S 1 2 0 Final Datasheet Rev. 2.0,<2012-03-23> Power Management & Multimarket thinQ SiC Schottky Diode IDW30S120 1 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the years as the industry standard and is now being extended with the IDWxxS120 product family in the TO247 package. The very good thermal characteristics of the TO247 in combination with the low V of the 1200V diodes make it particularly suitable in power f applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. 1 2 3 Features Revolutionary semiconductor material - Silicon Carbide 1 Benchmark switching behavior No reverse recovery/ No forward recovery 2 CASE Temperature independent switching behavior High surge current capability 3 Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target applications Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications SMPS e.g. CCM PFC Solar applications UPS Motor Drives Table 1 Key Performance Parameters Parameter Value (leg/device) Unit V 1200 V DC Q V =400V 55/110 nC C R I T < 135C 15/30 A F c Table 2 Pin Definition Pin 1 Pin 2 Pin 3 A C A Type / ordering Code Package Marking Related links IDW30S120 PG-TO247-3 D30S120 www.infineon.com/sic 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2012-03-23