X-On Electronics has gained recognition as a prominent supplier of DD89N16KHPSA1 discrete semiconductor modules across the USA, India, Europe, Australia, and various other global locations. DD89N16KHPSA1 discrete semiconductor modules are a product manufactured by Infineon. We provide cost-effective solutions for discrete semiconductor modules, ensuring timely deliveries around the world.

DD89N16KHPSA1 Infineon

DD89N16KHPSA1 electronic component of Infineon
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See Product Specifications
Part No.DD89N16KHPSA1
Manufacturer: Infineon
Category:Discrete Semiconductor Modules
Description: DIODE MODULE, 1.8KV, 89A
Datasheet: DD89N16KHPSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 152.9859 ea
Line Total: USD 152.99

Availability - 11
Ships to you between
Mon. 10 Jun to Fri. 14 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 152.9859
15 : USD 143.4487
30 : USD 137.5731
90 : USD 136.1251

14 - WHS 2


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 184.275
5 : USD 168.7481
10 : USD 160.3875

     
Manufacturer
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Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Diode Module Configuration
Svhc
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We are delighted to provide the DD89N16KHPSA1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD89N16KHPSA1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

Datenblatt / Data sheet N Netz-Dioden-Modul DD89N Rectifier Diode Module DD89N DD89N..K..-K ND89N Elektrische Eigenschaften / Electrical properties Kenndaten Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften 1200 1400 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1600 1800 V repetitive peak reverse voltages Thermische Eigenschaften 1300 1500 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 1900 V non-repetitive peak reverse voltage 140 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 89 A Dauergrenzstrom T = 100C I C FAVM average on-state current 2.800 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 2.400 A surge current T = T , t = 10 ms vj vj max P 39.200 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 28.800 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 1,5 V Durchlaspannung T = T , i = 300 A v vj vj max F F on-state voltage 0,75 V Schleusenspannung T = T V vj vj max (TO) threshold voltage 2,3 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 20 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,0 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 2,5 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,225 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,450 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,215 C/W pro Zweig / per arm, DC max. 0,430 C/W pro Modul / per Module max. 0,05 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,10 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur Tc op - 40...+150 C operating temperature T - 40...+150 C stg Lagertemperatur storage temperature C. Drilling date of publication: 29.04.03 prepared by: revision: 1 approved by: M. Leifeld BIP AC / 91-04-17, K.Spec A10/91 Seite/page 1/9 Datenblatt / Data sheet N Netz-Dioden-Modul DD89N Rectifier Diode Module Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Mechanische Eigenschaften Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz 15% M1 4 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz 10% M2 4 Nm terminal connection torque Gewicht G typ. 160 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC / 91-04-17, K.Spec A10/91 Seite/page 2/9

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