BSR316P SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 1.8 W DS(on),max Enhancement mode / Logic level I -0.36 A D Avalanche rated Pb-free lead plating RoHS compliant Footprint compatible to SOT23 PG-SC59 Qualified according to AEC Q101 Halogen free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Halogen-free Packing BSR316P PG-SC59 H6327 = 3000 pcs. / reel LC Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit steady state I T =25C -0.36 Continuous drain current A D A T =70C -0.29 A Pulsed drain current I T =25C -1.44 D,pulse A Avalanche energy, single pulse E I =-0.36A, R =25W 25 mJ AS D GS V 20 Gate source voltage V GS Power dissipation P T =25C 0.5 W tot C Operating and storage temperature T , T -55 ... 150 C j stg 1A (250V to 500V) ESD class JESD22-A114-HBM 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev 1.07 page 1 2015-07-24BSR316P Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, minimal footprint, R - - 250 K/W thJA junction - ambient steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage - - -100 V (BR)DSS GS D Gate threshold voltage V V =V , I =-170A -2 -1.5 -1 GS(th) DS GS D V =-100V, V =0V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25C j V =-100V, V =0V, DS GS - -10 -100 T =150C j Gate-source leakage current I V =-20V, V =0V - -10 -100 nA GSS GS DS V =-4.5V, GS Drain-source on-state resistance R - 1.8 2.2 W DS(on) I =-0.33A D V =-10V, GS - 1.3 1.8 I =-0.36A D V >2 I R , DS D DS(on)max g Transconductance 0.3 0.5 - S fs I =-0.29A D Rev 1.07 page 2 2015-07-24