BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 23 m DS(on),max GS Enhancement mode V =4.5 V 36 GS Logic level (4.5V) I 3.7 A D Avalanche rated Footprint compatible to SOT23 PG-SC-59 dv /dt rated 3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSR302N PG-SC-59 L6327 = 3000 pcs. / reel LEs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 3.7 A D A T =70 C 2.9 A I T =25 C Pulsed drain current 14.7 D,pulse A Avalanche energy, single pulse E I =3.7 A, R =25 30 mJ AS D GS I =3.7 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS P T =25 C Power dissipation 0.5 W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114-HMB 0 (0V to 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.3 page 1 2011-06-01BSR302N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 30 - - V (BR)DSS GS D V V =V , I =30 A Gate threshold voltage 1.2 1.7 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - - 100 T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =2.9 A -26 36 DS(on) GS D m V =10 V, I =3.7 A -18 23 GS D V >2 I R , DS D DS(on)max Transconductance g 12 - S fs I =3.7 A D Rev. 1.3 page 2 2011-06-01