X-On Electronics has gained recognition as a prominent supplier of BSP170P H6327 mosfet across the USA, India, Europe, Australia, and various other global locations. BSP170P H6327 mosfet are a product manufactured by Infineon. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BSP170P H6327 Infineon

BSP170P H6327 electronic component of Infineon
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See Product Specifications
Part No.BSP170P H6327
Manufacturer: Infineon
Category:MOSFET
Description: mosfet p trench 60v 1.9a 4v @ 250ua 300 m @ 1.9a,10v sot-223 rohs
Datasheet: BSP170P H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8752 ea
Line Total: USD 0.88

Availability - 1515
Ships to you between
Mon. 10 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4199 - WHS 1


Ships to you between
Tue. 11 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7869
10 : USD 0.643
30 : USD 0.572
100 : USD 0.501
500 : USD 0.4577
1000 : USD 0.4359

1518 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8752
10 : USD 0.774
100 : USD 0.5416
500 : USD 0.4646
1000 : USD 0.4059
2000 : USD 0.3749
5000 : USD 0.3576
10000 : USD 0.3576
25000 : USD 0.3461

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the BSP170P H6327 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP170P H6327 and other electronic components in the MOSFET category and beyond.

BSP170P SIPMOS Small-Signal-Transistor Product Summary Features V -60 V DS P-Channel R 0.3 DS(on),max Enhancement mode I -1.9 A D Avalanche rated dv /dt rated PG-SOT223 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Type Package Tape and reel information Marking Lead free Packing BSP170P PG-SOT223 H6327: 1000pcs/reel BSP170P Yes Non Dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit steady state I T =25 C -1.9 Continuous drain current A D A T =70 C -1.5 A I T =25 C -7.6 Pulsed drain current D,pulse A Avalanche energy, single pulse E I =1.9 A, R =25 70 mJ AS D GS Avalanche energy, periodic limited by E 0.18 AR T jmax I =1.9 A, V =48 V, D DS -6 Reverse diode dv /dt dv /dt di /dt =-200 A/s, kV/s T =150 C j,max V 20 Gate source voltage V GS Power dissipation P T =25 C 1.8 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-C101 (HBM) 1A (250V to 500V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.53 page 1 2012-11-26BSP170P Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 20 K/W thJS junction -soldering point R SMD version, device on PCB: minimal footprint - - 110 K/W thJA 2 1) -- 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage -60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-250 A -2.1 -3 -4 GS(th) DS GS D V =-60 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-60 V, V =0 V, DS GS - -10 -100 T =125 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS R V =-10 V, I =-1.9 A Drain-source on-state resistance - 239 300 m DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 1.3 2.6 - S fs I =-1.9 A D 1) 2 Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.53 page 2 2012-11-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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