AUIRGP4066D1 Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH C V = 600V CES ULTRAFAST SOFT RECOVERY DIODE Features I = 75A C(Nominal) Low V Trench IGBT Technology CE (ON) Low switching losses G t 5s, T = 175C SC J(max) Maximum Junction temperature 175 C 5 S short circuit SOA E V typ. = 1.70V Square RBSOA CE(on) n-channel 100% of the parts tested for 4X rated current (I ) LM Positive V Temperature Coefficient CE (ON) C Soft Recovery Co-Pak Diode C Tight parameter distribution Lead-Free, RoHS Compliant E Automotive Qualified * C E G Benefits C G High Efficiency in a wide range of applications TO-247AC TO-247AD Suitable for a wide range of switching frequencies due to AUIRGP4066D1 AUIRGP4066D1-E Low V and Low Switching losses CE (ON) Rugged transient Performance for increased reliability G C E Excellent Current sharing in parallel operation Gate Collector Emitter Low EMI Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGP4066D1 TO-247AC Tube 25 AUIRGP4066D1 AUIRGP4066D1-E TO-247AD Tube 25 AUIRGP4066D1-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25 C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES 140 I T = 25C Continuous Collector Current C C I T = 100C Continuous Collector Current 90 C C I Nominal Current 75 NOMINAL Pulse Collector Current V = 15V I 225 CM GE Clamped Inductive Load Current V = 20V I 300 A LM GE Diode Nominal Current 75 I F NOMINAL Diode Maximum Forward Current I 300 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 454 W D C P T = 100C Maximum Power Dissipation 227 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.33 C/W JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 0.53 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA *Qualification standards can be found at Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V 600 V V = 0V, I = 200A (BR)CES Collector-to-Emitter Breakdown Voltage GE C V /T (BR)CES J 0.30 V/CV = 0V, I = 15mA (25C-175C) T emperature Coeff. of Breakdown Voltage GE C 1.70 2.1 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 75A, V = 15V, T = 150C CE(on) C GE J 2.1 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C /TJ Threshold Voltage temp. coefficient -13 mV/C V = V , I = 20mA (25C - 175C) VGE( t h) CE GE C gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 25s CE C I Collector-to-Emitter Leakage Current 3.0 200 AV = 0V, V = 600V CES GE CE 10 mAV = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.60 1.77 V I = 75A FM F 1.54 I = 75A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 150 225 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E Turn-On Switching Loss 4240 5190 I = 75A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 2170 3060 JR = 10 , L = 100H, T = 25C off G J E Total Switching Loss 6410 8250 E nergy loss es include tail & diode reverse recovery total t Turn-On delay time 50 70 I = 75A, V = 400V, V = 15V d(on) C CC GE t Rise time 80 100 ns R = 10, L = 100H r G t Turn-Off delay time 200 230 TJ = 25C d(off) t Fall time 60 80 f E Turn-On Switching Loss 6210 I = 75A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 2815 JR =10, L=100H, T = 175C off G J E Total Switching Loss 9025 E nergy loss es include tail & diode reverse recovery total t Turn-On delay time 45 I = 75A, V = 400V, V =15V d(on) C CC GE t Rise time 70 ns R =10 , L=100H r G t Turn-Off delay time 240 T = 175C d(off) J t Fall time 80 f C Input Capacitance 4470 V = 0V ies GE pF C Output Capacitance 350 V = 30V oes CC C Reverse Transfer Capacitance 140 f = 1.0Mhz res T = 175C, I = 300A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp 600V CC 5 s Rg = 10, V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 680 JT = 175C J t Diode Reverse Recovery Time 240 ns V = 400V, I = 75A rr CC F I Peak Reverse Recovery Current 50 A V = 15V, Rg = 10, L =100H rr GE Notes: V = 80% (V ), V = 20V, L = 100 H, R = 50, tested in production I 400A. CC CES GE G LM Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur.