AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V 40V DSS 175C Operating Temperature R typ. 7.8m DS(on) Fast Switching max. 9.2m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax I 87A D (Silicon Limited) Lead-Free, RoHS Compliant I 56A D (Package Limited) Automotive Qualified * D Description Specifically designed for Automotive applications, this Stripe Planar S design of HEXFET Power MOSFETs utilizes the latest G processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and D-Pak ruggedized device design that HEXFET power MOSFETs are well AUIRFR3504 known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other G D S applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR3504 AUIRFR3504 D-Pak Tape and Reel Left 3000 AUIRFR3504TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 87 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 61 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 56 D C GS I Pulsed Drain Current 350 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.92 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 240 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 480 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.09 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRFR3504 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.041 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 7.8 9.2 m V = 10V, I = 30A ** DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 40 S V = 10V, I = 30A ** DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 48 71 I = 30A** g D Q Gate-to-Source Charge 12 18 nC V = 32V gs DS Q Gate-to-Drain Charge 13 20 V = 10V gd GS t Turn-On Delay Time 11 V = 20V d(on) DD t Rise Time 53 I = 30A** r D ns t Turn-Off Delay Time 36 R = 6.8 d(off) G t Fall Time 22 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2150 V = 0V iss GS C Output Capacitance 580 V = 25V oss DS C Reverse Transfer Capacitance 46 = 1.0MHz, See Fig.5 rss pF C Output Capacitance 2830 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 510 V = 0V, V = 32V = 1.0MHz oss GS DS C Effective Output Capacitance 870 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 87 S (Body Diode) showing the A Pulsed Source Current integral reverse I 350 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 30A**,V = 0V SD J S GS t Reverse Recovery Time 53 80 ns T = 25C ,I = 30A**, V = 20V rr J F DD Q Reverse Recovery Charge 86 130 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.52mH, R = 25 , I = 30A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS I 30A, di/dt 170A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. 100% tested to this value in production. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 56A. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J ** All AC and DC test conditions based on former package limited current of 30A. 2 2015-11-23