We are the renowned HYG016N04LS1B MOSFET seller and distributer in the USA, India, Europe, Australia, and beyond. HYG016N04LS1B MOSFET is a manufacturer from HuaYi. X-ON Electronics Components provides affordable electronic MOSFET in the USA.

HYG016N04LS1B

HYG016N04LS1B electronic component of HuaYi
Part No.HYG016N04LS1B
Manufacturer: HuaYi
Category:MOSFET
Description: 40V 240A 1.4mO@10V,40A 200W 1.9V@250uA 53pF@25V N Channel 5.894nF@25V 43.6nC@4.5V -55?~+175?@(Tj) TO-263-2L MOSFETs ROHS
Datasheet: HYG016N04LS1B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1321 ea
Line Total: USD 1.13

776 - Global Stock
Ships to you between
Wed. 05 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

HYG016N04LS1B More Buying Options & Price Grid(s)

Availability Price Quantity
776 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1321
10 : USD 0.9447
30 : USD 0.8501
100 : USD 0.7574
500 : USD 0.701
800 : USD 0.6708

We proudly offer the HYG016N04LS1B MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the HYG016N04LS1B MOSFET.

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The HYG016N04LS1B MOSFET produced by HuaYi is a 40V N-Channel device with 3 pin TO-263-2L package. The operational parameters of this transistor are 240A 1.4mO@10V, 40A 200W 1.9V@250uA, 53pF@25V, 5.894nF@25V, and 43.6nC@4.5V. Furthermore, this MOSFET has a temperature range of -55?~+175? (Tj) and meets RoHS 2011/65/EU directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Huayi may also be referenced as

HUAYI
HuaYi Microelectronics

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