We are the renowned HSBA6032 MOSFET seller and distributer in the USA, India, Europe, Australia, and beyond. HSBA6032 MOSFET is a manufacturer from HUASHUO. X-ON Electronics Components provides affordable electronic MOSFET in the USA.

HSBA6032

HSBA6032 electronic component of HUASHUO
Part No.HSBA6032
Manufacturer: HUASHUO
Category:MOSFET
Description: MOSFET N Channel 60V 60A 2.5V @ 250uA 8.5mO @ 20A,10V PRPAK5x6 RoHS
Datasheet: HSBA6032 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5821 ea
Line Total: USD 0.58

1195 - Global Stock
Ships to you between
Wed. 05 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
839 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5721
10 : USD 0.4633
30 : USD 0.417
100 : USD 0.3585
500 : USD 0.2942
1000 : USD 0.2781

We proudly offer the HSBA6032 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the HSBA6032 MOSFET.
     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The HSBA6032 from HUASHUO is an N-Channel MOSFET that is rated for 60 volts and 60 amps. At 2.5 volts, it has a gate to source current of 250 microamps (uA) and a drain to source resistance of 8.5 milliohms (mO) at 20 amps and 10 volts. It is packaged in a PRPAK5x6 enclosure and is RoHS compliant. It is suitable for use in a range of high-power switching applications, such as power supplies, motor control, and industrial automation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HUASHUO
Huashuo Semiconductor

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