We are the renowned GP2D003A060C Zener Diodes seller and distributer in the USA, India, Europe, Australia, and beyond. GP2D003A060C Zener Diodes is a manufacturer from Global Power Technologies. X-ON Electronics Components provides affordable electronic Zener Diodes in the USA.

GP2D003A060C

GP2D003A060C electronic component of Global Power Technologies
Part No.GP2D003A060C
Manufacturer: Global Power Technologies
Category:Zener Diodes
Description: Diode Silicon Carbide Schottky 600 V 3A Surface Mount TO-252-2L (DPAK)
Datasheet: GP2D003A060C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.7774
10 : USD 1.5843
25 : USD 1.5038
100 : USD 1.1278
250 : USD 1.1171
N/A

0 - WHS 2


Multiples : 1
N/A

0 - WHS 3


Multiples : 1
N/A

We proudly offer the GP2D003A060C Zener Diodes at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the GP2D003A060C Zener Diodes.
     
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Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
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GP2D003A060C VDC 600 V Q 7 nC C I 3 A F 600V SiC Schottky Diode TM TM TM Amp+ Features Amp+ Benefits Amp+ Applications High surge current capable Unipolar rectifier Motor drives Zero reverse recovery current Zero switching loss Switch mode power supplies High bandwidth Higher efficiency Power factor correction Fast, temperature-independent switching Smaller heat sink Parallel devices with thermal stability Part # Package Marking TO-252-2L GP2D003A060C 2D003A060 (DPAK) Maximum Rating Symbol Conditions Value Unit T =25 C, T =175 C C j 10 I T =125 C, T =175 C Continuous forward current F C j 5 T =150 C, T =175 C C j 3 A T =25 C, t =8.3 ms 24 Surge non-repetitive forward current C p I F,SM sine halfwave T =150 C, t =8.3 ms 15 C p Non-repetitive peak forward current I T =25 C, t =10 ms F,max C p 60 T =25 C, t =8.3 ms C p 2 2 2 2 i t value i dt A s T =150 C, t =8.3 ms C p 1 T =25 C Repetitive peak reverse voltage V 600 V RRM j Turn-on slew rate, repetitive Diode dv/dt ruggedness dv/dt 50 V/ns Power dissipation P T =25 C 36 W C tot Operating & storage temperature T , T Continuous -55175 C J storage Soldering temperature T Wave soldering leads C solder 260 Mounting torque M3 Screw N-m 1 Electrical Characteristics, at T =25 C, unless otherwise specified j Values Static Characteristics Symbol Conditions Unit min. typ. max. DC blocking voltage V I =0.1mA R 600 - - DC o V I =3A, T =25 C - 1.45 1.65 F j Diode forward voltage V F o I =3A, T =175 C - 1.65 2.00 F j o V =600V, T =25 C - 1.0 10 R j Reverse current I mA R o V =600V, T =175 C - 30 240 R j 8/27/2015 Rev 2 www.gptechgroup.com p.1TM 600V SiC Schottky Diode Amp + GP2D003A060C Values Parameter Symbol Conditions Unit min. typ. max. AC Characteristics o Total capacitive charge Q V =600V, T =25 C - 7 - nC C R j di /dt=200 A/ ms F Switching time t - - <10 ns C T =150 C j V =1 V, f=1 MHz - 158 - R Total capacitance C V =300V, f=1 MHz - 14 - pF R V =600V, f=1 MHz R - 11 - Thermal Characteristics o Thermal resistance, junction-case R Package (flange) mount - 4.18 - C/W thJC Typical Performance Fig. 2 Reverse Characteristics (parameterized on Tj) Fig. 1 Forward Characteristics (parameterized on T ) j 1.E-02 25C 25C 4 1.E-03 75C 75C 1.E-04 125C 125C 3 175C 175C 1.E-05 2 1.E-06 1.E-07 1 1.E-08 0 1.E-09 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 3 Power Derating Fig. 4 Current Derating 40 35 o o 100% T =175 C T =175 C Duty cycle j j 35 30 50% 30 25 30% 25 20% 20 10% 20 15 15 10 10 5 5 0 0 25 75 125 175 25 75 125 175 o o T ( C) T ( C) C C 8/27/2015 Rev 2 www.gptechgroup.com p.2 P (W) I (A) Total F I (A) I (A) F R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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