GS66506T-MR

GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Top-side cooled configuration RDS(on) = 67 m IDS(max) = 22.5 A Ultra-low FOM die Low inductance GaNPX package Package Outline Circuit Symbol Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 5.6 x 4.5 mm PCB footprint Dual gate pads for optimal board layout RoHS3 (6 + 4) compliant The thermal pad is internally connected to Source (S pin 3) and substrate Applications Description AC-DC Converters The GS66506T is an enhancement mode GaN-on- DC-DC converters silicon power transistor. The properties of GaN allow Uninterruptable Power Supplies for high current, high voltage breakdown and high Industrial Motor Drives switching frequency. GaN Systems innovates with Appliance Motor Drives industry leading advancements such as patented Fast Battery Charging Class D Audio amplifiers Island Technology and GaNPX packaging. Island Wireless Power Transfer Technology cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS66506T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 22.5 A case DS Continuous Drain Current (T = 100 C) I 18 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 48 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) top side RJC 0.7 C /W Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66506T-TR GaNPX Top-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66506T-MR GaNPX Top-Side Cooled Mini-Reel 250 7 (180mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback