Product Information

1N5408G

1N5408G electronic component of EIC Semiconductor

Datasheet
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS 2DO-201AD
Manufacturer: EIC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.223 ea
Line Total: USD 0.22

176 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
176 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

1N5408G
EIC Semiconductor

1 : USD 0.223
10 : USD 0.1816
30 : USD 0.1639
100 : USD 0.1417
500 : USD 0.1319
1000 : USD 0.1259

9700 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 1000

Stock Image

1N5408G
EIC Semiconductor

3000 : USD 0.206

Read More Specifications

     
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Pcb Changed
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Mounting
Lead Shape
Diameter
Automotive
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Standard Package Name
Military
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Additional Infomation About Product

The 1N5408G with GLASS PASSIVATED JUNCTION SILICON RECTIFIERS 2DO-201AD is a three-phase silicon rectifier diode designed for use in high-voltage applications. It has a continuous blocking voltage rating of 800 volts and a peak repetitive reverse voltage rating of 1000 volts. It has a junction temperature rating of 125 degrees Celsius and a storage temperature range between -50 and 150 degrees Celsius. The 1N5408G diode is manufactured and distributed by EIC Semiconductor. It features glass passivated junction technology with an ultra-fast recovery time of 5 nanoseconds, providing superior performance in a wide range of high-power applications. It is manufactured in the DO-201AD 2 amp mold package for cost-effective production and improved thermal dissipation. This makes the 1N5408G with glass passivated junction silicon rectifiers 2DO-201AD an ideal choice for high-voltage, high-power applications.

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