ZXTP25020CFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Description Mechanical Data Advanced process capability and packaging maximize the power Case: SOT23F handling and performance of this small outline transistor. The reverse Case Material: Molded Plastic. Green Molding Compound. blocking capability of the transistor can often result in the elimination UL Flammability Classification Rating 94V-0 of a series connected Schottky diode commonly required with either Moisture Sensitivity: Level 1 per J-STD-020 bipolar transistors or MOSFETs when used in battery charging Terminals: Finish Matte Tin Plated Leads, Solderable per applications. MIL-STD-202, Method 208 Weight: 0.012 grams (Approximate) Applications Features Mobile Phone Charging Circuits BV > -20V CEO MOSFET and IGBT Gate Drivers BV > -7V ECO High-Side Driving I = -4.5A Continuous Collector Current C Motor Control Low Saturation Voltage V < -65mV -1A CE(SAT) Disconnect Switch in Portable Products R = 41m CE(SAT) DC-DC Convertors h Characterised Up to -10A FE 1.5W Power Dissipation Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23F C E C B B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP25020CFFTA AEC-Q101 1F4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP25020CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Collector Voltage (Reverse Blocking) -7 V VECO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -4.5 A I C Peak Pulse Current -10 A I CM Base Current -1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.79 (Note 5) 6.3 1.13 (Note 6) Power Dissipation 9.0 W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 1.96 (Note 8) 15.7 (Note 5) 158.7 (Note 6) 110.4 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83.3 (Note 8) 63.7 (Note 9) Thermal Resistance, Junction to Lead R 60 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP25020CFF February 2016 Diodes Incorporated www.diodes.com Document number: DS33747 Rev. 2 - 2