DT2041-04SO
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary Features
V I C Low Clamping Voltage: Typical 9V at 10A 100ns, TLP, I/O to
BR (Min) PP (Max) T (Typ)
V ; Typical 8V at 10A 100ns, TLP, V to V
6V 10A 1.0pF SS CC SS
IEC 61000-4-2 (ESD): Air 30kV, Contact 30kV
IEC61000-4-5(Lighting):10A,I/O to V 12A, V to V
SS; CC SS
Description
TLP Dynamic Resistance: 0.25
The DT2041-04SO is a high-performance device suitable for
Low Channel Input Capacitance of 1.0pF Typical
protecting four high speed I/Os. These devices are assembled in
4 Channel of ESD Protection
SOT26 package and have high ESD surge capability and low
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
capacitance.
Halogen and Antimony Free. Green Device (Note 3)
Applications
Mechanical Data
Typically used at high-speed ports such as USB 2.0, IEEE1394
Case: SOT26
(Firewire, iLink), Serial ATA, DVI, HDMI, PCI.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method208
Weight: 0.016 grams (Approximate)
SOT26
Top View Device Schematic
Circuit Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DT2041-04SO-7 Standard BC4 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DT2041-04SO
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC61000-4-5 10 A
I I/O to V , 8/20 s
PP SS
Peak Pulse Current, per IEC61000-4-5 12 A
I V to V , 8/20 s
PP CC SS
Peak Pulse Power, per IEC61000-4-5 105 W
P I/O to V , 8/20 s
PP SS
Operating Voltage (DC) V 5.5 V I/O to V V to V
DC SS, CC SS
ESD Protection Contact Discharge, per IEC61000-4-2 V 30 kV I/O to V V to V
ESD_CONTACT SS, CC SS
ESD Protection Air Discharge, per IEC61000-4-2 V 30 kV I/O to V V to V
ESD_AIR SS, CC SS
Operating Temperature -55 to +85 C
T
OP
Storage Temperature T -55 to +150 C
STG
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical (Note 5) 300 mW
P
D
Thermal Resistance, Junction to Ambient Typical (Note 5) 417 C/W
R
JA
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage 5.5 V I/O to V V to V
V SS, CC SS
RWM
Reverse Current (Note 6) 1 A V = 5V, I/O to V V to V
I R SS, CC SS
R
Reverse Breakdown Voltage 6 9 V I = 1mA, I/O to V V to V
V R SS, CC SS
BR
Forward Clamping Voltage -1.0 -0.8 V I = -15mA, I/O to V V to V
V F SS, CC SS
F
Holding Voltage 5.5 V
V
H
Trigger Voltage 9 9.5 V
V
TRIG
Reverse Clamping Voltage (Note 7) V 7.5 V I = 5A, I/O to V , 8/20 s
C_5A PP SS
Reverse Clamping Voltage (Note 7) V 9 10.5 V I = 10A, I/O to V , 8/20 s
C_10A PP SS
9 TLP, 10A, tp = 100ns, I/O to V
SS
ESD Clamping Voltage V V
ESD
8 TLP, 10A, tp = 100ns, V to V
CC SS
0.25 TLP, 10A, tp = 100ns, I/O to V
R SS
Dynamic Resistance DIF
0.15 TLP, 10A, tp = 100ns, V to V
CC SS
1.0 1.5 pF
Channel Input Capacitance C V = 2.5V, V =5V, f = 1MHz
T I/O CC
V = 0V, V = 2.5V, f =1MHz,
SS I/O
Variation of Channel Input Capacitance 0.02 pF
C
T
I/O_x to V I/O_y to V
SS SS
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website
at