DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Very Low Gate Threshold Voltage (1.0V max) Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Fast Switching Speed Terminals: Finish Matte Tin annealed over Copper Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Small Surface Mount Package Marking Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Ordering Information: See Page 4 ESD Protected up to 2kV Weight: 0.015 grams (approximate) Gree Device (Note 4) Qualified to AEC-Q101 standards for High Reliability SOT-26 D G S 2 1 1 ESD protected up 2kV S G D 2 2 1 TOP VIEW BOTTOM VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain Source Voltage 50 V V DSS Gate-Source Voltage V V 20 GSS Drain Current (Note 1) Continuous 305 I mA D Pulsed (Note 3) 800 Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 400 mW D Thermal Resistance, Junction to Ambient 313 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = 25C I 60 nA V = 50V, V = 0V C DSS DS GS V = 12V, V = 0V 1 A GS DS Gate-Body Leakage 500 I nA V = 10V, V = 0V GSS GS DS 50 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.49 1.0 V V = V , I = 250A GS(th) DS GS D V = 1.8V, I = 50mA 3.0 GS D Static Drain-Source On-Resistance 2.5 R V = 2.5V, I = 50mA DS (ON) GS D 2.0 V = 5.0V, I = 50mA GS D On-State Drain Current I 0.5 1.4 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance Y 200 mS V =10V, I = 0.2A fs DS D Source-Drain Diode Forward Voltage V 0.5 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 50 pF iss V = 25V, V = 0V DS GS Output Capacitance C 25 pF oss f = 1.0MHz Reverse Transfer Capacitance 5.0 pF C rss Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc.s Green policy can be found on our website at DMN5L06DMK V , GATE-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) GS DS Fig. 2 Typical Transfer Characteristics Fig. 1 Typical Output Characteristics 10 1 0 0 75 -50 -25 0 25 50 100 125 150 T , CHANNEL TEMPERATURE (C) I, DRAIN CURRENT (A) ch D Fig. 3 Gate Threshold Voltage vs. Channel Temperature Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 1 V GATE SOURCE VOLTAGE (V) I , DRAIN CURRENT (A) GS, D Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2 of 4 September 2007 DMN5L06DMK Diodes Incorporated www.diodes.com Document number: DS30927 Rev. 4 - 2 NEW PRODUCT