DMN12M7UCA10 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 2.98mm 1.49mm IS Max BV R SSS SS(ON) Typ Height = 0.11mm for Low Profile TA = +25C ESD Protection of Gate 12V 2.3 m V = 3.8V 20.2A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control Description (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please This new generation MOSFET is designed to minimize the on-state contact us or your local Diodes representative. resistance (R ) and yet maintain superior switching performance, SS(ON) DMN12M7UCA10 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Source-Source Voltage V 12 V SSS Gate-Source Voltage V 8 V GSS T = +25C 20.2 A Steady Continuous Source Current (Note 5) V = 4.5V I A GS S State 16.1 TA = +70C 13.6 TA = +25C Steady A Continuous Source Current (Note 5) VGS = 2.5V IS State T = +70C 10.8 A Pulsed Source Current (Note 6) 80 A ISM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 0.74 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 171.9 C/W A JA Power Dissipation (Note 5) 1.73 W PD 74.4 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage BV 12 V V = 0V, I = 1mA SSS GS S Zero Gate Voltage Drain Current T = +25C I 1 A V = 9.6V, V = 0V J SSS SS GS 10 A VGS = 8V, VSS = 0V Gate-Source Leakage I GSS 1 A VGS = 5V, VSS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 0.8 1.4 V VSS = 10V, IS = 1.11mA VGS(TH) 1.55 2.19 2.75 VGS = 4.5V, IS = 6A 1.6 2.30 2.85 VGS = 3.8V, IS = 6A Static Source-Source On-Resistance R m SS(ON) 1.65 2.51 3.95 VGS = 3.1V, IS = 6A 1.9 2.93 6.1 V = 2.5V, I = 6A GS S Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 6A SS GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 3039 iss VSS = 10V, VGS = 0V, Output Capacitance C 530 pF oss f = 1MHz Reverse Transfer Capacitance 141 Crss Total Gate Charge 35.7 Qg Gate-Source Charge 6.7 Qgs V = 6V, V = 4V, SS GS nC Gate-Drain Charge 9.2 I = 6A Qgd S 3.4 Gate Charge at VTH Qg(th) Turn-On Delay Time 880 tD(ON) Turn-On Rise Time t 1468 R VSS = 6V, VGS = 4V, ns Turn-Off Delay Time t 2914 IS = 6A D(OFF) Turn-Off Fall Time t 2830 F 2 2 Notes: 5. Device mounted on FR-4 material with 1inch (6.45cm ), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN12M7UCA10 December 2019 Diodes Incorporated www.diodes.com Document number: DS40841 Rev. 3 - 2