DMN10H220LE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) max Low Input Capacitance T = +25C A Fast Switching Speed 220m V = 10V 2.3A GS 100V Low Input/Output Leakage 250m V = 4.5V 2.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate This new generation MOSFET is designed to minimize the on-state Datasheet (DMN10H220LEQ) resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT223 Case Material: Molded Plastic, Green Molding Compound DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H220LE-13 Standard SOT223 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H220LE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 2.3 A A I D 1.8 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 6.2 C I A D 4.9 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) I 1.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit TA = +25C 1.8 Total Power Dissipation (Note 5) W P D TA = +70C 1.1 Thermal Resistance, Junction to Ambient (Note 5) 69 C/W R JA Total Power Dissipation (Note 5) TC = +25C P 14 W D Thermal Resistance, Junction to Case (Note 5) 8.7 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 1.7 2.5 V V V = V , I = 250A GS(TH) DS GS D 155 220 V = 10V, I = 1.6A GS D Static Drain-Source On-Resistance R m DS(ON) 190 250 V = 4.5V, I = 1.3A GS D Diode Forward Voltage V 0.8 1.5 V V = 0V, I = 1.1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 401 iss V = 25V, V = 0V DS GS Output Capacitance C 22 pF oss f = 1.0MHz Reverse Transfer Capacitance C 17 rss Gate Resistance 2.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS 4.1 Total Gate Charge (V = 4.5V) Q GS g 8.3 Total Gate Charge (V = 10V) Q GS g nC V = 50V, I = 1.6A DS D Gate-Source Charge 1.5 Q gs Gate-Drain Charge 2 Q gd Turn-On Delay Time t 6.8 D(ON) Turn-On Rise Time t 8.2 R V = 50V, V = 4.5V, DS GS ns Turn-Off Delay Time t 7.9 R = 6.8 I = 1.0A D(OFF) G D Turn-Off Fall Time t 3.6 F Reverse Recovery Time 17 ns t RR I = 1.1A, di/dt =100A/s S Reverse Recovery Charge 9.8 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 7 DMN10H220LE November 2017 Diodes Incorporated www.diodes.com Document number: DS36475 Rev. 4 - 2