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A Product Line of Diodes Incorporated DMC2020USD 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 I Max D Low gate drive Device V R max (BR)DSS DS(on) T = 25 C A Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m V = 4.5V 8.5A GS ESD Protected up to 2kV Q1 20V 28m V = 2.5V 7.2A Lead Free, RoHS Compliant (Note 1) GS Halogen and Antimony Free.Gree Device (Note 1) 33m V = -4.5V -6.8A GS Q2 -20V 45m V = -2.5V -5.8A GS Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Description and Applications UL Flammability Classification Rating 94V-0 This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making it DS(on) Terminals Connections: See Diagram ideal for high efficiency power management applications. Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Motor control Weight: 0.074 grams (approximate) DC-DC Converters Power management functions Notebook Computers and Printers Drain Drain SO-8 S1 D1 Body Body Diode Diode Gate Gate D1 G1 Gate Gate S2 D2 Protection Protection Source Source Diode Diode D2 G2 Q1 N-Channel Q2 P-Channel Top View ESD PROTECTED TO 2kV Equivalent Circuit Top View Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC2020USD-13 C2020UD 13 12 2,500 Notes: 1. No purposefully added lead. Diodes Inc. sGree policy and packaging details can be found on our website at A Product Line of Diodes Incorporated DMC2020USD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source Voltage 20 -20 V DSS V Gate-Source Voltage V 10 10 GSS (Notes 3 & 5) 8.5 -6.8 6.8 -5.4 T = 70C (Notes 3 & 5) A Continuous Drain Current V = 4.5V I GS D (Notes 2 & 5) 6.5 -5.2 (Notes 2 & 6) 7.8 -6.3 A Pulsed Drain Current V = 4.5V (Notes 4 & 5) I 33.6 -26.8 GS DM Continuous Source Current (Body diode) (Notes 3 & 5) I 4.0 -4.0 S Pulsed Source Current (Body diode) (Notes 4 & 5) I 33.6 -26.8 SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit 1.25 (Notes 2 & 5) 10 Power Dissipation 1.8 W (Notes 2 & 6) Linear Derating Factor P D 14.3 mW/C 2.14 (Notes 3 & 5) 17.2 (Notes 2 & 5) 100 Thermal Resistance, Junction to Ambient (Notes 2 & 6) 70 R JA C/W (Notes 3 & 5) 58 Thermal Resistance, Junction to Lead (Notes 5 & 7) R 51 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 February 2011 DMC2020USD Diodes Incorporated www.diodes.com Document number: DS32121 Rev. 4 - 2
