Product Information

MMBT3906

Product Image X-ON

Datasheet
Transistors (NPN/PNP) PNP 200mA 40V SOT-23 (SOT-23-3) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.027

95800 - Global Stock
Ships to you between
Fri. 13 Aug to Thu. 19 Aug
MOQ: 50 Multiples:50
Pack Size :   50
Availability Price Quantity
267100 - Global Stock


Ships to you between Fri. 13 Aug to Thu. 19 Aug

MOQ : 50
Multiples : 50

Stock Image

MMBT3906
Changjiang

50 : $ 0.2255
500 : $ 0.1804
1500 : $ 0.1721
5000 : $ 0.1639
25000 : $ 0.1602
50000 : $ 0.1584

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT-23 (SOT-23-3)
Brand Category
Changjiang
Transistor Type
Pnp
Current - Collector Ic Max
200 mA
Voltage - Collector Emitter Breakdown Max
40 V
Power - Max
200 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT23 FEATURES z As complementary type, the NPN transistor MMBT3904 is Recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -0.2 A C P Collector Dissipation 0.2 W C R Thermal resistance junction to ambient 625 /W JA T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V I =-10A, I=0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I = -1mA, I=0 -40 V (BR)CEO C B Emitter-base breakdown voltage V I = -10A, I=0 -5 V (BR)EBO E C Collector cut-off current I V = -40 V, I=0 -100nA CBO CB E Collector cut-off current I V =-30V, V=-3V -50 nA CEX CE BE(off) Emitter cut-off current I V = -5V, I=0 -100nA EBO EB C h V =-1V, I = -10mA 100 300 FE1 CE C DC current gain h V = -1V, I=-50mA 60 FE2 CE C h V = -1V, I=-100mA 30 FE3 CE C Collector-emitter saturation voltage V I =-50mA, I=-5mA -0.3 V CE(sat)1 C B Base-emitter saturation voltage V I = -50mA, I=-5mA -0.95V BE(sat) C B Transition frequency f V =-20V,I=-10mA,f=100MHz 300 MHz T CE C Delay Time td 35 nS V =-3V,V =-0.5V CC BE I =-10mA, I =I =-1mA C B1 B2 Rise Time tr 35 nS Storage Time ts 225 nS V =-3V,I =-10mA CC C I =I =-1mA B1 B2 Fall Time tf 75 nS CLASSIFICATION OF h FE(1) HFE 100-300 RANK L H RANGE 100200 200300 D,May,2012Typical Characterisitics MMBT3906 h I Static Characteristic FE C -100 300 COMMON EMITTER COMMON V =-1V EMITTER CE -500uA T =100 T =25 a a -80 -450uA -400uA 200 -350uA -60 -300uA T =25 a -250uA -200uA -40 -150uA 100 -100uA -20 I =-50uA B -0 0 -0.1 -1 -3 -10 -100 -0 -4 -8 -12 -16 -20 -0.3 -30 -200 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C -500 -1.2 -300 T =25 a T =100 a -0.8 -100 T =100 a T =25 a -0.4 -30 =10 =10 -10 -0.0 -1 -3 -10 -30 -100 -200 -1 -3 -10 -30 -100 -200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 9 -100 COMMON EMITTER f=1MHz V =-1V I =0/I =0 CE E C -30 T =25 a C ob T =100 a -10 C ib -3 3 T =25 a -1 -0.3 1 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -0.3 -1 -3 -10 -20 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (V) BE f I P T T C C a 600 250 V =-20V CE T =25 a 200 400 150 100 50 200 0 -1 -3 -10 -50 0 25 50 75 100 125 150 -30 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a D,May,2012 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) C COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h FE VOLTAGE V CAPACITANCE C (pF) (V) P (mW) BEsat C

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)