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CMPTA44 TR

CMPTA44 TR electronic component of Central Semiconductor
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See Product Specifications
Part No. CMPTA44 TR
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT NPN High Voltage
Datasheet: CMPTA44 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8926 ea
Line Total: USD 0.89

15 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5810 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4129
10 : USD 0.3749
100 : USD 0.3128
500 : USD 0.2887
1000 : USD 0.2703
3000 : USD 0.2461
6000 : USD 0.2392
9000 : USD 0.2323
24000 : USD 0.23

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMPTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 450 V CBO Collector-Emitter Voltage V 400 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 300 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=400V 100 nA CBO CB I V=400V 500 nA CES CE I V=4.0V 100 nA EBO BE BV I=100A 450 V CBO C BV I=100A 450 V CES C BV I=1.0mA 400 V CEO C BV I=10A 6.0 V EBO E V I =1.0mA, I=0.1mA 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.50 V CE(SAT) C B V I =50mA, I=5.0mA 0.75 V CE(SAT) C B V I =10mA, I=1.0mA 0.75 V BE(SAT) C B h V =10V, I=1.0mA 40 FE CE C h V =10V, I=10mA 50 200 FE CE C h V =10V, I=50mA 45 FE CE C h V =10V, I=100mA 20 FE CE C f V =10V, I =10mA, f=10MHz 20 MHz T CE C C V =20V, I =0, f=1.0MHz 7.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 130 pF ib EB C R5 (3-February 2010)CMPTA44 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C3Z R5 (3-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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