CMLDM5757 SURFACE MOUNT SILICON www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM5757 MOSFET consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r and low threshold voltage. DS(ON) MARKING CODE: 77C FEATURES: ESD protection up to 1800V (Human Body Model) SOT-563 CASE 350mW power dissipation Very low r DS(ON) APPLICATIONS: Low threshold voltage Load switch/Level shifting Logic level compatible Battery charging Small, SOT-563 surface mount package Boost switch Complementary dual N-Channel device: CMLDM3737 Electro-luminescent backlighting MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 430 mA D Maximum Pulsed Drain Current (tp=10s) I 750 mA DM Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 1) 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =4.5V, V=0 2.0 A GSSF GSSR GS DS I V =16V, V=0 1.0 A DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.45 1.0 V GS(th) DS GS D V V =0, I=350mA 1.2 V SD GS S r V =4.5V, I=430mA 0.9 DS(ON) GS D r V =2.5V, I=300mA 1.2 DS(ON) GS D r V =1.8V, I=150mA 2.0 DS(ON) GS D C V =16V, V =0, f=1.0MHz 20 pF rss DS GS C V =16V, V =0, f=1.0MHz 175 pF iss DS GS C V =16V, V =0, f=1.0MHz 30 pF oss DS GS 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R2 (5-June 2013)CMLDM5757 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =10V, V =4.5V, I=200mA 1.2 nC g(tot) DS GS D Q V =10V, V =4.5V, I=200mA 0.24 nC gs DS GS D Q V =10V, V =4.5V, I=200mA 0.36 nC gd DS GS D t V =10V, V =4.5V, I =215mA, R=10 38 ns on DD GS D G t V =10V, V =4.5V, I =215mA, R=10 48 ns off DD GS D G SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 77C R2 (5-June 2013) www.centralsemi.com