AVT-55689
50 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description Features
Avago Technologies AVT-55689 is an economical, easy-to- Small signal gain amplifier
use, general purpose InGaP HBT MMIC gain block amplifier
Operating frequency 50 MHz to 6 GHz
utilizing Darlington pair configuration housed in a 3-lead
Unconditionally stable
(SOT 89) surface mount plastic package.
50 Ohm input & output
The Darlington feedback structure provides inherent
Industry standard SOT-89
broad bandwidth performance, resulting in useful
operating frequency up to 6 GHz. This is an ideal device
Lead-free, RoHS compliant, Green
for small-signal gain cascades or IF amplification.
Specifications
AVT-55689 is fabricated using advanced InGaP HBT
(hetero-junction Bipolar Transistor) technology that
2 GHz, 5 V Vcc, 75 mA (typ.)
offering state-of-the-art reliability, temperature stability
17.2 dB Gain
and performance consistency.
19.5 dBm P1dB
Component Image
32.5 dBm OIP3
4.3 dB NF
19 dB IRL and 10.7 dB ORL
55X
Applications
Wireless Data / WLAN
#3 #2 #1 WiMAX / WiBRO
#1 #2 #3
RFin GND RFout RFout GND RFin
CATV & Cable modem
Top View Bottom View
ISM
Notes:
Typical Biasing Configuration
Package marking provides orientation and identification
55 = Device Code
Vcc
X = Month of manufacture
C C
byp byp
Attention: Observe precautions for
L
handling electrostatic sensitive devices.
ESD Machine Model = 140 V
C
block
ESD Human Body Model = 1600 V
RFin RFout
Refer to Avago Application Note A004R:
Pin 1 Pin 3
Electrostatic Discharge, Damage and Control.
C Input Output
block
Pin 2
(Gnd) (1)
Absolute Maximum Rating T = 25 C Thermal Resistance
A
(3)
Symbol Parameter Units Absolute Max.
Thermal Resistance = 111 C/W
jc
(I = 75 mA, T = 85 C)
V Device Voltage V 5.5 d c
d, MAX
Notes:
P CW RF Input Power dBm 18
IN, MAX
1. Operation of this device in excess of any of
(2)
P Total Power Dissipation mW 550
DISS these limits may cause permanent damage.
2. Ground lead temperature is 25 C. Derate 8.9
T Operating Temperature C -40 to 85
OPT
mW/ C for T >108 C.
c
T Junction Temperature C 150
J, MAX 3. Thermal resistance measured using Infrared
measurement technique.
T Storage Temperature C -65 to 150
STG
(1)
Electrical Specification
T = 25 C, Zo = 50 , V = 5 V, P = -15 dBm (unless specified otherwise)
A CC in
Symbol Parameter and Test Condition Frequency Units Min. Typ. Max.
I Device Current mA 66 75 86
d
G Power Gain 900 MHz dB 18.8
p
2000 MHz 15.5 17.2 18.5
f 3 dB Bandwidth GHz 2.5
3dB
(2) rd
OIP3 Output 3 Intercept Point 900 MHz dBm 35
2000 MHz 30 32.5
S11 900 MHz dB -27
Input Return Loss, 50 source
2000 MHz -19
S22 Output Return Loss, 50 load 900 MHz dB -14
2000 MHz -10.7
S12 Reverse Isolation 900 MHz dB -22.6
2000 MHz -22.7
P1dB Output Power at 1 dB Gain Compression 900 MHz dBm 20.6
2000 MHz 19.5
NF Noise Figure 900 MHz dB 4.1
2000 MHz 4.3
Note :
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: F - F = 10 MHz with input power of -15 dBm per tone measured at worse side band.
RF1 RF2
2