TISP4040H1BJR-S

TISP4015H1BJ, TISP4025H1BJ, TISP4030H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxH1BJ VLV Overvoltage Protector Series Low Capacitance Agency Recognition 4015.................................................................................... 78 pF Description 4030.................................................................................... 62 pF 4040.................................................................................... 59 pF UL File Number: E215609 Digital Line Signal Level Protection -ISDN SMBJ Package (Top View) -xDSL Safety Extra Low Voltage, SELV, values R(B) 12 T(A) V V DRM (BO) Device V V 4015 8 15 MDXXBGE 4025 13 25 Device Symbol 4030 15 30 T 4040 25 40 100 A H Series specified for: ITU-T recommendations K.20, K.45, K.21 FCC Part 68 and GR-1089-CORE I TSP Wave Shape Standard SD4XAA A R 2/10 s GR-1089-CORE 500 Terminals T and R correspond to the 8/20 s IEC 61000-4-5 400 alternative line designators of A and B 10/160 s FCC Part 68 200 ITU-T K.20/45/21 10/700 s 150 .............................................. UL Recognized Component FCC Part 68 10/560 s FCC Part 68 125 10/1000 s GR-1089-CORE 100 Description These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. How to Order DevicePackage Carrier Order As Marking Code Std. Qty. TISP40xxH1BJ SMB (DO-214AA) Embossed Tape Reeled TISP40xxH1BJR-S 40xxH1 3000 Insert xx value corresponding to protection voltages of 15 V, 30 V and 40 V. AUGUST 1999 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP40xxH1BJ VLV Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4015 8 4025 13 V V DRM Repetitive peak off-state voltage 4030 15 4040 25 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 500 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 400 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 200 I A TSP 5/310 s (ITU-T K.20/45/21, 10/700 s voltage wave shape) 150 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 150 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 125 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms (50 Hz) full sine wave 45 16.7 ms (60 Hz) full sine wave 50 I A TSM 0.2s 50 Hz/60 Hz a.c. 21 2s 50Hz/60 Hz a.c. 7 1000 s 50 Hz/60 Hz a.c. 2 Initial rate of rise of current (2/10 waveshape) di/dt 450 A/s Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium with T =25 C. J 2. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A ParameterTest Conditions MinTyp MaxUnit Repetitive peak off- I V =V 5 A DRM D DRM state current 4015 15 4025 25 V Breakover voltagedi/dt =0.8 A/ms V (BO) 4030 30 4040 40 dv/dt 1000 V/s, Linear voltage ramp, 4015 33 Impulse breakover Maximum ramp value =500V V 4025 / 4030 57 V (BO) voltage di/dt= 12A/s, Linear current ramp, 4040 74 Maximum ramp value =10 A I Breakover current di/dt= 0.8 A/ms 0.8 A (BO) V On-state voltage I = 5 A, t = 100 s 3 V T Tw V =6V 4015 D 4025 V = 11V D I Off-state current 2 A D 4030 V = 13 V D 4040 V = 22 V D I Holding current I = 5A, di/dt= 30mA/ms 50m A H T AUGUST 1999 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.