Advanced Power Electronics Corp. AP2309GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Small Package Outline BV -30V DSS Surface Mount Device R 75m DS(ON) G RoHS-compliant, Halogen-free I -3.7A D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S The AP2309GN-HF-3 is in the popular SOT-23 small surface-mount package SOT-23 G which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage -30 V DS V Gate-Source Voltage 20 V GS 3 I at T =25C Continuous Drain Current -3.7 A D A 3 I at T = 70C Continuous Drain Current -3 A D A 1 I Pulsed Drain Current -12 A DM P at T =25C Total Power Dissipation 1.38 W D A Linear Derating Factor 0.01 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 90 C/W Ordering Information AP2309GN-HF-3TR : in RoHS-compliant, halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel 2011 Advanced Power Electronics Corp. USA 200807212-3 1/5 www.a-powerusa.comAdvanced Power Electronics Corp. AP2309GN-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =-250uA -30 - - V DSS GS D BV /Tj Breakdown Voltage Temperature Coefficient Reference to 25C, ID=-1mA - -0.02 - V/C DSS 2 R Static Drain-Source On-Resistance V =-10V, I =-3A - - 75 m DS(ON) GS D V =-4.5V, I =-2.6A - - 120 m GS D V Gate Threshold Voltage V =V , I =-250uA -1 - -3 V GS(th) DS GS D g Forward Transconductance V =-10V, I =-3A - 5 - S fs DS D I Drain-Source Leakage Current V =-30V, V =0V - - -1 uA DSS DS GS o uA Drain-Source Leakage Current (T=55 C) V =-24V, V =0V - - -25 j DS GS I nA Gate-Source Leakage V =20V - - 100 GSS GS 2 Q Total Gate Charge I =-3A - 5 8 nC g D nC Q Gate-Source Charge V =-24V - 1 - gs DS nC Q Gate-Drain Mille) Charge V =-4.5V - 3 - gd GS 2 t Turn-on Delay Time V =-15V - 8 - ns d(on) DS ns t Rise Time I =-1A - 5 - r D ns t Turn-off Delay Time R =3.3, VGS=-10V - 20 - d(off) G t Fall Time R =15 - 7 - ns f D pF C Input Capacitance V =0V - 412 660 iss GS pF C Output Capacitance V =-25V - 91 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 62 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =-1.2A, V =0V - - -1.2 V SD S GS 2 t Reverse Recovery Time I =-3A, V =0V, - 20 - ns rr S GS Reverse Recovery Charge dI/dt=100A/s - 15 - nC Q rr Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300s , duty cycle < 2% 2 3. Surface mounted on 1 in copper pad of FR4 board, t <10sec 270C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2011 Advanced Power Electronics Corp. USA 2/5 www.a-powerusa.com