ES.08G2W.GFE

Memory Product Specification ES.08G2W.GFE 8GB 1G x 64 DDR4-2800MHz CL17 Overclocking SO-DIMM Description: The overclocking SO-DIMM for 1G x 64 of 8GB DDR4-2800MHz CL17-18-18-38 at 1.2V Memory Module. The Module base on eight 1024M x 8 DDR4 FBGA SDRAM components. The SPDs are programmed to JEDEC standard latency DDR4-2133MHz of CL15-15-15 at 1.2V. Memory Module intended for mounting into 260-pin edge connector sockets. The electrical and mechanical specifications are as follows: Features: DDR4 Speed Grade : 2133Mbps Organization 1G 64, 1 rank Mounting 8 pieces of 8G bits DDR4 SDRAM sealed in FBGA Package: 260-pin socket type small outline dual in-line memory module (SO-DIMM) PCB height: 1.181 inch (30.00 mm) Lead-free (RoHS compliant) Halogen free Power supply: VDD = 1.2V (1.14V to 1.26V) 16 internal banks (4 Bank Groups) Burst lengths (BL): 8 and 4 with Burst Chop (BC) Precharge: auto precharge option for each burst access Refresh: auto-refresh, self-refresh Refresh cycles Average refresh period 7.8s at 0C TC +85C 3.9s at +85C < TC +95C Operating case temperature range TC = 0C to +95C Overclocking Datasheet w/ Intel XMP: DDR4 Speed Grade : 2800Mbps Power supply: VDD Voltage : 1.2V VDDQ Voltage: 1.2V CAS latency : CL17-18-18-38 Bandwidth : 22400MB/s Serial presence detect with EEPROM. PCB height : 1.181 inch (30.00 mm) RoHS Compliant Halogen free Application : Gaming player