X-On Electronics has gained recognition as a prominent supplier of AS4C512M16D3LA-10BIN dram across the USA, India, Europe, Australia, and various other global locations. AS4C512M16D3LA-10BIN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C512M16D3LA-10BIN

AS4C512M16D3LA-10BIN electronic component of Alliance Memory
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Part No.AS4C512M16D3LA-10BIN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
Datasheet: AS4C512M16D3LA-10BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 33.7324 ea
Line Total: USD 33.73

Availability - 277
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
212 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 32.6945
10 : USD 30.7395
25 : USD 29.049
100 : USD 26.1625
180 : USD 26.1625
540 : USD 26.1625
1080 : USD 26.1395
2520 : USD 26.059

     
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We proudly offer the AS4C512M16D3LA-10BIN DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C512M16D3LA-10BIN DRAM.

AS4C512M16D3LA Revision History 8Gbit DDR3L SDRAM 8 BANKS X 64Mbit X 16 - Dual Die Package (DDP) 96ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 41 - Rev.1.0 Feb.2019AS4C512M16D3LA Specifications Features - Density : 8G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : - The high-speed data transfer is realized by the 8 bits prefetch pipe- - 64M words x 16 bits x 8 banks lined architecture - Package : - Bi-directional differential data strobe (DQS and DQS ) is transmitted/ - 96-ball FBGA received with data for capturing data at the receiver - Two 512Mbit x 8 dies stacked (DDP) - DQS is edge-aligned with data for READs center-aligned with data - Lead-free (RoHS compliant) and Halogen-free for WRITEs - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Differential clock inputs (CK and CK) - -Backward compatible to VDD, VDDQ =1.5V 0.075V - DLL aligns DQ and DQS transitions with CK transitions - Data rate : 1866Mbps - Commands entered on each positive CK edge data and data mask - 2KB page size referenced to both edges of DQS - Row address: A0 to A15 - Data mask (DM) for write data - Column address: A0 to A9 - Posted CAS by programmable additive latency for better command - Eight internal banks for concurrent operation and data bus efficiency - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - On-Die Termination (ODT) for better signal quality - Burst type (BT) : - Synchronous ODT - Sequential (8, 4 with BC) - Dynamic ODT - Interleave (8, 4 with BC) - Asynchronous ODT - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13 - Multi Purpose Register (MPR) for pre-defined pattern read out - CAS Write Latency (CWL) : 5, 6, 7, 8 ,9 - ZQ calibration for DQ drive and ODT - Precharge : auto precharge option for each burst access - RESET pin for Power-up sequence and reset function - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - SRT range : Normal/extended - Refresh : auto-refresh, self-refresh - Programmable Output driver impedance control - Refresh cycles : - Average refresh period 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +105C - Operating case temperature range - Comercial Tc = 0C to +95C - Industrial Tc = -40C to +95C - Automotive Tc = -40C to +105C Table 1. Ordering Information Org Temperature Max Clock (MHz) Product part No Package 933 AS4C512M16D3LA-10BCN 512M x 16 96-ball FBGA Commercial 0C to 95C 933 512M x 16 Industrial -40C to 95C 96-ball FBGA AS4C512M16D3LA-10BIN 933 AS4C512M16D3LA-10BAN 96-ball FBGA Automotive -40C to 105C 512M x 16 Table 2. Speed Grade Information CAS Latency tRCD(ns) Speed Grade tRP(ns) Clock Frequency DDR3-1866 933 MHz 13 13.91 13.91 Confidential - 2 of 41 - Rev.1.0 Feb.2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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