X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3A-12BAN dram across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3A-12BAN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C128M16D3A-12BAN

AS4C128M16D3A-12BAN electronic component of Alliance Memory
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Part No.AS4C128M16D3A-12BAN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 2G 1.5V 800MHz 128M x 16 DDR3
Datasheet: AS4C128M16D3A-12BAN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 10.5193
10 : USD 7.2764
25 : USD 7.1269
50 : USD 7.0948
100 : USD 6.5926
250 : USD 6.5926
500 : USD 6.4003
1000 : USD 6.2828
2000 : USD 6.0797
N/A

Obsolete
     
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We proudly offer the AS4C128M16D3A-12BAN DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C128M16D3A-12BAN DRAM.

AS4C128M16D3A-12BAN Revision History 2Gb AS4C128M16D3A-12BAN - 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -183- Rev. 1.0 May 2016AS4C128M16D3A-12BAN 128M x 16 bit DDR3 Synchronous DRAM (SDRAM) Features Overview JEDEC Standard Compliant The 2Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. It is Power supplies: V & V = +1.5V 0.075V DD DDQ internally configured as an eight bank DRAM. Automotive temperature: -40~105 C (TC) The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 AEC-Q100 Compliant bank devices. These synchronous devices achieve Supports JEDEC clock jitter specification high speed double-data-rate transfer rates of up to Fully synchronous operation 1866 Mb/sec/pin for general applications. Fast clock rate: 800MHz The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address Differential Clock, CK & CK inputs are synchronized with a pair of externally Bidirectional differential data strobe supplied differential clocks. Inputs are latched at the - DQS & DQS cross point of differential clocks (CK rising and CK 8 internal banks for concurrent operation falling). All I/Os are synchronized with differential DQS 8n-bit prefetch architecture pair in a source synchronous fashion. Pipelined internal architecture These devices operate with a single 1.5V 0.075V Precharge & active power down power supply and are available in BGA packages. Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8s -40C TC +85C 3.9s +85C TC +105C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 8 x 13 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Product part No Org Max Clock (MHz) Package AS4C128M16D3A -12BAN 800 128Mx16 96-ball FBGA Automotive -40C to 105C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP 800 MHz 11 13.75 13.75 DDR3-1600 Confidential -283- Rev. 1.0 May 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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