X-On Electronics has gained recognition as a prominent supplier of JANTX1N4100-1 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. JANTX1N4100-1 bipolar transistors - bjt are a product manufactured by Aeroflex. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

JANTX1N4100-1

JANTX1N4100-1 electronic component of Aeroflex
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Part No.JANTX1N4100-1
Manufacturer: Aeroflex
Category:Bipolar Transistors - BJT
Description: Diode Zener Single 7.5V 5% 500mW 2-Pin DO-35
Datasheet: JANTX1N4100-1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.2283 ea
Line Total: USD 7.23

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 87
Multiples : 1
87 : USD 9.7163

0 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 7.2283

0 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 87
Multiples : 87
87 : USD 8.9784

     
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We proudly offer the JANTX1N4100-1 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the JANTX1N4100-1 Bipolar Transistors - BJT.

1N4614-1 1N4627-1e3, 1N4099-1 1N4135-1e3 Qualified Levels: 500 mW Metallurgically Bonded JAN, JANTX, Available on Glass Zener Diodes JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/435 DESCRIPTION The 1N4099-1 through 1N4135-1 and 1N4614-1 through 1N4627-1 series are 500 mW, Zener voltage regulators in the axial-leaded, glass DO-35 package. Voltages from 1.8 to 100V in 5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical bond and are mil-qualified up to the JANS level for high reliability applications. Important: For the latest information, visit our website 1N4614-1 1N4627-1e3, 1N4099-1 1N4135-1e3 MECHANICAL and PACKAGING CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) style package. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin (on commercial grade only) plating. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode indicated by band. The diode is to be operated with the banded end positive with respect to the opposite end for Zener regulation. MARKING: Part number. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4099 C -1 e3 Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (available JANTX = JANTX level on commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant JANS = JANS level Blank = Commercial Metallurgically Bonded JEDEC type number (See Electrical Characteristics table) Zener Voltage Tolerance Blank = 5% C = 2% D = 1% SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Regulator Voltage: The change in regulator voltage divided by the change in temperature VZ that caused it expressed in %/C or mV/C. I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R IZ, IZT, IZK Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK). I Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. ZM N Noise Density: The noise generated over a specified frequency bandwidth usually specified in terms of mV/ Hz. D V Reverse Voltage: The reverse voltage dc value, no alternating component. R V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region. Z Z Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a Z or Z ZT ZK specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively. ZT ZK ZT ZK T4-LDS-0245-2, Rev. 1 (5/31/13) 2013 Microsemi Corporation Page 2 of 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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