Product Information

DS3920T-002+T

DS3920T-002+T electronic component of Analog Devices

Datasheet
Current & Power Monitors & Regulators Fast APD Bias w/20mA limit

Manufacturer: Analog Devices
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Price (USD)

1: USD 3.3744 ea
Line Total: USD 3.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - Global Stock


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DS3920T-002+T
Analog Devices

1 : USD 2.7632
10 : USD 2.2981
30 : USD 1.9622
100 : USD 1.6822
500 : USD 1.6359
1000 : USD 1.6116

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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DS3920T-002+T
Analog Devices

1 : USD 3.3744
10 : USD 2.4318
25 : USD 2.2932
100 : USD 2.016
250 : USD 1.8173
500 : USD 1.6356
1000 : USD 1.4418
2500 : USD 1.3811

     
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DS3920 Fast Current Mirror General Description Features The DS3920 precision current mirror is designed for ava- S Wide Voltage Input Range: 2.97V to 76V lanche photodiode (APD) and PIN photodiode biasing S Current Monitor and monitoring applications. The device offers a current Wide 250nA to 2mA Range clamp to limit current through the APD and a current mir- 5:1 Mirror Ratio ror output that produces a signal proportional (5:1) to the Fast 50ns Time Constant APD current. A diode is also provided to limit the voltage S Current Clamp (4.4mA or 20mA, typ) at the current mirror output. S Voltage Clamp Protects Subsequent Output Circuitry The device accepts a +2.97V to +76V current mirror supply voltage. Internal current limiting (4.4mA or 20mA, S 6-Pin SOT23 (MAX4007 Compatible) typ) protects the monitored device from a short circuit to Applications ground. The provided internal clamp diode protects the current mirror output from overvoltage. Additionally, the Avalanche Photodiode (APD) Biasing device features thermal shutdown if the die temperature PIN Photodiode Monitoring reaches +150NC. GEPON, GPON, 10GEPON, XGPON: ONU and OLT The device is available in a 6-pin SOT23 package, and operates over the -40NC to +85NC extended temperature Ordering Information appears at end of data sheet. range. Typical Application Circuit APD BIAS R FILTER 1001000 3.3V MIRIN DIODE C FILTER 0.1F CURRENT MONITOR I I /5 MIROUT MIROUT THERMAL SHUTDOWN I /5 GND MIR MIROUT V OUT CURRENT LIMIT R OUT DS3920 1k5k MIROUT R AGC 499 ROSA APD TIA For related parts and recommended products to use with this part, refer to: www.maximintegrated.com/DS3920.related For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrateds website at www.maximintegrated.com. 19-5797 Rev 2 12/11DS3920 Fast Current Mirror ABSOLUTE MAXIMUM RATINGS Voltage Range on MIRIN, MIROUT, Operating Junction Temperature Range ......... -40NC to +150NC and DIODE Relative to GND ............................-0.3V to +80V Storage Temperature Range ............................ -55NC to +135NC Voltage Range on MIR Lead Temperature (soldering, 10s) ................................+300NC Relative to GND .............................. -0.3V to (V + 0.6V) Soldering Temperature (reflow) ......................................+260NC DIODE Continuous Power Dissipation (T = +70NC) A SOT23 (derate 13.4mW/NC above +70NC) .............1072.4mW Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = 2.97V to 76V, T = -40NC to +85NC, unless otherwise noted.) MIRIN A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS MIRIN Voltage V 2.97 76 V MIRIN MIRIN Current I I = 2.5mA 4.4 mA MIRIN MIROUT Diode Forward Current I 5 mA DF I = 100FA, T = +25NC 0.6 DF A Diode Forward Voltage V V DF I = 5mA, T = +25NC 1.25 DF A 10 20 40 DS3920T-001 version, T = +25NC A MIROUT Current Limit I mA MIROUT DS3920T-002 version, T = +25NC 2.8 4.4 8 A MIROUT Series Resistance R (Note 1) 100 W AGC 1FA to 2.5mA 0.190 0.200 0.210 MIR to MIROUT Ratio K A/A MIR I > 2.5mA 0.180 0.200 0.220 MIROUT V = 3V (Note 2) 4800 15,000 (DI /I ) MIRIN MIR MIR Power-Supply Rejection Ratio ppm/V /DV MIRIN V = 30V or 60V (Notes 2, 3) 100 500 MIRIN MIR Current Rise Time t (Note 4) 30 ns RC (20%/80%) Thermal Shutdown Temperature T (Note 3) +150 NC SHDN Thermal Shutdown Hysteresis T (Note 3) 20 NC HYST Note 1: See the Typical Application Circuit. Note 2: 1V DC change applied to MIRIN 100FA at MIROUT 4.99kI load to ground on MIR. Note 3: Guaranteed by design not production tested. Note 4: Rising MIROUT transition from 10FA to 1mA 15V < V < 76V. OUT Maxim Integrated 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Analog Devices Hittite
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