Product Information

TX50N06

TX50N06 electronic component of XDS

Datasheet
MOSFET N Channel 60V 50A(Tc) 2.5V @ 250uA 20mO @ 20A,10V TO-252 RoHS
Manufacturer: XDS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2742 ea
Line Total: USD 1.37

2279 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1978 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5
5 : USD 0.302
50 : USD 0.2445
150 : USD 0.2198
500 : USD 0.189
2500 : USD 0.1754
5000 : USD 0.1671

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The XDS TX50N06 is a MOSFET N-Channel 60V 50A(Tc) 2.5V @ 250uA 20mO @ 20A, 10V TO-252 RoHS manufactured electronic component designed to be used as a power switch application. With its low on-resistance, this N-Channel MOSFET can switch very high currents with low gate drive power consumption, making it ultra-efficient. This component’s robust and reliable TO-252 RoHS package minimizes the effect of temperature on its electrical characteristics, making it suitable for applications that require reliable performance. The TX50N06's maximum three-terminal ratings are 60V drain-source voltage with a maximum on-state current rating at 50A(Tc). The component has a standard gate-source voltage rating of 2.5V @ 250uA and a maximum on-state resistance of 20mO @ 20A, 10V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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