Product Information

DF2B6M4ASL,L3F

DF2B6M4ASL,L3F electronic component of Toshiba

Datasheet
ESD Suppressors TVS Diodes Bi-Dir ESD 2A; 5.5V SOD-962 SL2
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3611 ea
Line Total: USD 0.36

19400 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
17875 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.3496
10 : USD 0.2438
100 : USD 0.1012
1000 : USD 0.0667
2500 : USD 0.0633
10000 : USD 0.0552
20000 : USD 0.0541
50000 : USD 0.0495
100000 : USD 0.0483

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

DF2B6M4ASL ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4ASLDF2B6M4ASLDF2B6M4ASLDF2B6M4ASL 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B6M4ASL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4ASL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4ASL is housed in an ultra-compact package (0.62 mm 0.32 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5.0 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 15 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.7 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 10 V I = 2 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm 0.32 mm size (Nickname: SL2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging SL2 Start of commercial production 2019-07 2019 2019-08-05 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0DF2B6M4ASL 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.15 0.2 pF t R Dynamic resistance R (Note 2) 0.7 DYN Electrostatic discharge voltage V (Note 3) 15 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2019 2019-08-05 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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