Product Information

STTH20002TV1

STTH20002TV1 electronic component of STMicroelectronics

Datasheet
Rectifiers TURBO 2 ULTRAFAST HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18.3796 ea
Line Total: USD 18.38

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 1

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STTH20002TV1
STMicroelectronics

100 : USD 26.247
500 : USD 22.646

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 35.9599
5 : USD 33.0226
10 : USD 31.4171
50 : USD 28.5837
100 : USD 26.9506

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 100

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STTH20002TV1
STMicroelectronics

100 : USD 23.976
200 : USD 22.2

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 30.9795
10 : USD 27.4337
25 : USD 26.7651
50 : USD 26.1077
100 : USD 25.4391

0 - WHS 5


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 26.6379
10 : USD 26.6379
30 : USD 25.9564
32 : USD 25.9564
34 : USD 25.9564
36 : USD 25.9564

0 - WHS 6


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 24.6928
10 : USD 22.7803
100 : USD 19.4466

0 - WHS 7


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 27.3543
2 : USD 25.8603

0 - WHS 8


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 22.4432
5 : USD 22.2197
10 : USD 21.9962
30 : USD 21.5563

0 - WHS 9


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STTH20002TV1
STMicroelectronics

1 : USD 53.1577

0 - WHS 10


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STTH20002TV1
STMicroelectronics

1 : USD 18.3796
2 : USD 17.106
3 : USD 16.764

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Semiconductor Structure
Electrical Mounting
Type Of Module
Max Load Current
Reverse Recovery Time
LoadingGif

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STTH20002TV TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K1 I Up to 2 x 120 A F(AV) A2 K2 V 200 V RRM T 150C j K1 V (typ) 0.75 V F A1 t (typ) 41 ns rr K2 FEATURES AND BENEFITS A2 Suited for SMPS ISOTOP Very Low Forward Losses STTH20002TV1 Low recovery time High surge current capability Insulated: Insulating voltage=2500V RMS Capacitance = 55pF DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward voltage 170 A F(RMS) I Average forward current Tc = 95C Per diode 100 A F(AV) = 0.5 Tc = 80C Per diode 120 I Surge non repetitive forward current tp = 10ms sinusoidal 1000 A FSM T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Order Codes Part Number Marking STTH20002TV1 STTH20002TV1 July 2004 REV. 2 1/5STTH20002TV THERMAL RESISTANCE Symbol Parameter Maximum Unit R Junction to case Per diode 0.52 C/W th(j-c) Total 0.31 R Coupling 0.1 C/W th(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I * Reverse leakage current T = 25C V = V 100 A R j R RRM T = 125C 80 800 j V ** Forward voltage drop T = 25C I = 100A 1.05 V F j F I = 200A 1.20 F T = 150C I = 100A 0.75 0.85 j F I = 200A 1.05 F Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% 2 To evaluate the conduction losses use the following equation: P = 0.65 x I + 0.002 I F(AV) F (RMS) DYNAMIC CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit t Reverse recovery T = 25C I = 1A dI /dt = 200 A/s 41 50 ns rr j F F time V =30V R I Reverse recovery T = 125C I = 100A V = 160V 11.5 15 A RM j F R current dI /dt = 200 A/s F t Forward recovery T = 25C I = 100A dI /dt = 200 A/s 800 ns fr j F F time V = 1.1 x V FR Fmax V Forward recovery T = 25C I = 100A dI /dt = 200 A/s 2.5 V FP j F F voltage 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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