Ships to you between Fri. 24 May to Thu. 30 May
STPS15L25D STMicroelectronics
Ships to you between Thu. 30 May to Mon. 03 Jun
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STPS15L25D/G LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 15 A F(AV) V 25 V RRM K Tj (max) 150 C V (max) 0.35 V F A FEATURES A NC K n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND RE- DUCED HEATSINK n OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST 2 TO-220AC D PAK EFFICIENCY IN THE APPLICATIONS STPS15L25D STPS15L25G n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Single Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters (V ). RMS 2 Packaged in TO-220AC or D PAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS and DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 25 V RRM I RMS forward current 30 A F(RMS) I Average forward current Tc = 145C = 0.5 15 A F(AV) I Surge non repetitive forward current tp = 10ms Sinusoidal 250 A FSM I Repetitive peak reverse current tp = 2s square F=1kHz 1A RRM I Non repetitive peak reverse current tp = 100s square 4A RSM P Repetitive peak avalanche power tp = 1s Tj = 25C 9000 W ARM T Storage temperature range -65to+150 C stg Tj Maximum operating junction temperature * 150 C Critical rate of rise of reverse voltage dV/dt 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed : 5B 1/5STPS15L25D/G THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case 1 C/W th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Test conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25C V = 1.3 mA R R V RRM Tj = 125C 225 450 mA V * Forward voltage drop Tj = 25C I = 15A 0.46 V F F Tj = 125C I = 15A 0.3 0.35 F Tj = 25C I = 30A 0.56 F Tj = 125C I = 30A 0.41 0.46 F Pulse test : * tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.24xI + 0.0073 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( = 0.5). IF(av)(A) PF(av)(W) 16 8 = 0.1 = 0.2 = 0.05 14 = 0.5 Rth(j-a)=Rth(j-c) 7 12 6 10 5 8 4 = 1 Rth(j-a)=50C/W 6 3 T T 4 2 1 2 IF(av) (A) =tp/T tp tp Tamb(C) =tp/T 0 0 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(ARMtp) PARM(1s) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5
