STAC2943 STMicroelectronics

STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features High power capability P = 350 W min. with 22dB gain 30 MHz OUT P = 450 W SAT Low R DS(on) STAC air cavity packaging technology - STAC package Gold metallization Excellent thermal stability Common source configuration STAC177B Description The STAC2943 is a gold metallized N-channel Figure 1. Pin connection MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150 1 (drain) MHz. This device offers a 20% higher power saturation than the SD2933, and is ideal for ISM applications where reliability and ruggedness are critical factors. 2 (source) 4 (source) 3 (gate) 5 (source) on backside Table 1. Device summary (1) Order code Marking Base qty. Package Packaging (1) STAC2943 STAC2943 25 pcs STAC177B Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications.. January 2012 Doc ID 022675 Rev 1 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice.Contents STAC2943 Contents 1 Electrical data 3 2 Electrical characteristics . 4 3 Impedance . 6 4 Typical performance . 7 5 Package mechanical data . 8 6 Marking, packing and shipping specifications . 10 7 Revision history . 11 2/12 Doc ID 022675 Rev 1