X-On Electronics has gained recognition as a prominent supplier of MRF6V2150NR1 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. MRF6V2150NR1 rf mosfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

MRF6V2150NR1 NXP

MRF6V2150NR1 electronic component of NXP
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Part No.MRF6V2150NR1
Manufacturer: NXP
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors VHV6 150W
Datasheet: MRF6V2150NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 50.7362
2 : USD 48.3823
5 : USD 45.4731
10 : USD 44.5194
N/A

Obsolete
0 - WHS 2

MOQ : 6
Multiples : 1
6 : USD 85.9538
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 90.0343
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Height
Length
Type
Width
Brand
Channel Mode
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the MRF6V2150NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6V2150NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

DocumentNumber:MRF6V2150N FreescaleSemiconductor Rev. 4, 4/2010 TechnicalData RFPowerField--EffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2150NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2150NBR1 frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical andscientific applications. Typical CW Performanceat 220MHz: V =50Volts,I = 450mA, DD DQ 10--450MHz,150W,50V P = 150Watts out LATERALN--CHANNEL Power Gain 25dB SINGLE--ENDED DrainEfficiency 68.3% BROADBAND Capableof Handling10:1VSWR, 50Vdc, 220MHz, 150Watts CW RFPOWERMOSFETs Output Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE1486--03,STYLE1 TO--270 WB--4 QualifiedUptoaMaximum of 50V Operation DD PLASTIC IntegratedESD Protection MRF6V2150NR1 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit RF /V RF /V Drain--Source Voltage V --0.5,+110 Vdc in GS out DS DSS Gate--SourceVoltage V --0.5,+12 Vdc GS StorageTemperatureRange T --65to+150 C stg RF /V RF /V in GS out DS CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J (Top View) Table2.ThermalCharacteristics (2,3) Note: Exposedbacksideofthepackageis Characteristic Symbol Value Unit thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature80C, 150W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =75mA,V =0Vdc) D GS Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1 1.62 3 Vdc GS(th) (V =10Vdc,I =400Adc) DS D GateQuiescentVoltage V 1.5 2.6 3.5 Vdc GS(Q) (V =50Vdc,I =450mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =1Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 1.6 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 93 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 163 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =450mA,P = 150W,f=220MHz,CW DD DQ out PowerGain G 23.5 25 26.5 dB ps Drain Efficiency 66 68.3 % D Input ReturnLoss IRL --17 --9 dB TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =450mA,P =150W CW DD DQ out PowerGain f =27 MHz G 32.3 dB ps f=450MHz 22.9 Drain Efficiency f =27 MHz 78.7 % D f=450MHz 57.6 Input ReturnLoss f =27MHz IRL --10.6 dB f=450MHz --17.6 ATTENTION: TheMRF6V2150NandMRF6V2150NB arehighpowerdevices andspecialconsiderations must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263 (forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2150NR1MRF6V2150NBR1 RF DeviceData FreescaleSemiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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