Product Information

SD2931-12W

SD2931-12W electronic component of STMicroelectronics

Datasheet
RF MOSFET TRANSISTORS RF PWR N-CH MOS 150W 14DB 175MHZ
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 82.5678 ea
Line Total: USD 4128.39

0 - Global Stock
MOQ: 50  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 50
Multiples : 1

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SD2931-12W
STMicroelectronics

50 : USD 82.5678
500 : USD 80.8038
5000 : USD 71.3538
25000 : USD 67.6368
50000 : USD 67.6242

0 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2
Multiples : 1

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SD2931-12W
STMicroelectronics

2 : USD 89.235

Read More Specifications

     
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Additional Infomation About Product

SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 150 W MIN. WITH 14 dB GAIN OUT 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS PIN CONNECTION field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 230 4 1 MHz. 3 2 1. Drain 3. Gate 2. Source 4. Source ORDER CODES Order Codes Marking Package Packaging SD2931 SD2931 M174 Plastic Tray ABSOLUTE MAXIMUM RATINGS (T = 25 C) CASE Symbol Parameter Value Unit V Drain Source Voltage 125 V (BR)DSS V Drain-Gate Voltage (R = 1M ) 125 V DGR GS V Gate-Source Volatge 20 V GS I Drain Current 20 A D P Power Dissipation 292 W DISS T Max. Operating Junction Temperature 200 C j T Storage Temperature -65 to +150 C STG THERMAL DATA R Junction -Case Thermal Resistance 0.6 C/W th(j-c) REV. 4 July 2004 1/10 Obsolete Product(s) - Obsolete Product(s)SD2931 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 100 mA 125 V (BR)DSS GS DS I V = 0 V V = 50 V 50 A DSS GS DS I V = 20 V V = 0 V 250 nA GSS GS DS V V = 10 V I = 250 mA 1.5 4.0 V GS(Q)* DS D V V = 10 V I = 10 A 3.0 V DS(ON) GS D G V = 10 V I = 5 A 5mho FS DS D C V = 0 V V = 50 V f = 1 MHz 480 pF ISS GS DS C V = 0 V V = 50 V f = 1 MHz 190 pF OSS GS DS C V = 0 V V = 50 V f = 1 MHz 18 pF RSS GS DS * V sorted with alpha/numeric code marked on unit. GS(Q) DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 50 V I = 250 mA f = 175 MHz 150 W OUT DD DQ G V = 50 V I = 250 mA P 150 W f = 175 MHz 14 15 dB PS DD DQ OUT = V = 50 V I = 250 mA P = 150 W f = 175 MHz 55 65 % D DD DQ OUT Load V = 50 V I = 250 mA P 150 W f = 175 MHz DD DQ OUT = 10:1 VSWR Mismatch All Phase Angles IMPEDANCE DATA V SORTS GS D AA 1.5 - 1.6 J 2.8 - 2.9 BB 1.6 - 1.7 K 2.9 - 3.0 CC 1.7 - 1.8 L 3.0 - 3.1 Z DL DD 1.8 - 1.9 M 3.1 - 3.2 Typical Input Typical Drain EE 1.9 - 2.0 N 3.2 - 3.3 Impedance Load Impedance A 2.0 - 2.1 P 3.3 - 3.4 B 2.1 - 2.2 Q 3.4 - 3.5 G Zin C 2.2 - 2.3 R 3.5 - 3.6 D 2.3 - 2.4 S 3.6 - 3.7 E 2.4 - 2.5 T 3.7 - 3.8 F 2.5 - 2.6 U 3.8 - 3.9 S G 2.6 - 2.7 V 3.9 - 4.0 H 2.7 - 2.8 Z ()Z ( ) FREQ IN DL 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 2/10 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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