X-On Electronics has gained recognition as a prominent supplier of PD55003TR-E rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. PD55003TR-E rf mosfet transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

PD55003TR-E STMicroelectronics

PD55003TR-E electronic component of STMicroelectronics
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Part No.PD55003TR-E
Manufacturer: STMicroelectronics
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors POWER R.F.
Datasheet: PD55003TR-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 7.8477 ea
Line Total: USD 4708.62

Availability - 0
MOQ: 600  Multiples: 600
Pack Size: 600
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 600
Multiples : 600
600 : USD 11.2645
3000 : USD 11.1514
6000 : USD 11.0396
9000 : USD 10.9291
12000 : USD 10.8199
15000 : USD 10.712
24000 : USD 10.6054
30000 : USD 10.4988
75000 : USD 10.3935

0 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 13.9238
10 : USD 12.0847

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Height
Length
Type
Width
Brand
Channel Mode
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 3 W with 17dB gain 500 MHz / 12.5 V OUT PowerSO-10RF Description (formed lead) The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the PowerSO-10RF first true SMD plastic RF power package, the (straight lead) PowerSO-10RF. The PD55003s superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain Gate assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55003-E PowerSO-10RF (formed lead) Tube PD55003S-E PowerSO-10RF (straight lead) Tube PD55003TR-E PowerSO-10RF (formed lead) Tape and reel PD55003STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12273 Rev 4 1/29 www.st.com 29Contents PD55003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance for the PowerSO-10RF formed lead . 7 4.2 Performance for the PowerSO-10RF straight lead 10 5 Typical performance (860 MHz) . 12 5.1 Performance for the PowerSO-10RF formed lead 12 6 Test circuit 13 7 Circuit layout 15 8 Common source s-parameter 16 9 Package mechanical data 22 10 Revision history . 28 2/29 Doc ID 12273 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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