Product Information

ESDAXLC4-1BF3

ESDAXLC4-1BF3 electronic component of STMicroelectronics

Datasheet
TVS DIODE 55W 3V 1CH BI FLIPCHIP

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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ESDAXLC4-1BF3
STMicroelectronics

1 : USD 0.7247
10 : USD 0.6189
100 : USD 0.4625
500 : USD 0.3634
1000 : USD 0.2808
N/A

Obsolete
0 - WHS 2


Multiples : 1

Stock Image

ESDAXLC4-1BF3
STMicroelectronics

N/A

Obsolete
0 - WHS 3


Multiples : 1

Stock Image

ESDAXLC4-1BF3
STMicroelectronics

N/A

Obsolete
     
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RoHS - XON
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ESDAXLC4-1BF3 Single line extra low capacitance TVS Features Stand-off voltage 3 V Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz Bidirectional device Low clamping factor V /V CL BR Fast response time Flip Chip (2 bumps) Very thin package: 0.36 mm max Low leakage current Complies with the following standards Figure 1. Schematic diagram (top view) IEC 61000-4-2 level 4 Applications Where transient over voltage protection and electrical overstress protection in sensitive equipment is required, such as: Computers Printers Communication systems Cellular phone handsets and accessories Video equipment Portable equipment Description The ESDAXLC4-1BF3 is a single line Transil diode designed specifically for the protection of integrated circuits into portable equipment and miniaturized electronics devices subject to ESD and EOS transient over voltages. Packaged in WLCSP, it minimizes PCB consumption. TM: Transil is a trademark of STMicroelectronics May 2011 Doc ID 018522 Rev 2 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s) Characteristics ESDAXLC4-1BF3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V kV PP IEC61000-4-2 contact discharge 8 (1) P Peak pulse power dissipation (8/20 s) T = T 55 W PP j initial amb I Repetitive peak pulse current (8/20 s) T = T 3A PP j initial amb T Junction temperature - 55 to +125 C j T Storage temperature range - 65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit Figure 2. Electrical characteristics (definitions) Symbol Parameter V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL I Leakage current V RM RM C Line capacitance line Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 4 5.5 - V BR R I V = 3 V -- 50 nA RM RM V I (8/20 s) = 1 A - - 10 V CL PP C F = 200 MHz -3000 MHz, V = 0 V DC, V = 30 m V -0.3 0.4 pF line R osc RMS 2/10 Doc ID 018522 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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