ESDAULC6-8F3 STMicroelectronics

ESDAULC6-8F3 8-line ultralarge bandwidth ESD protection Features 8-line 15 kV ESD protection ultralarge bandwidth: no influence on signal rise and fall times maximized number of signal harmonics Leed-free Flip-Chip package low PCB space consumption: (9 bumps) 1.2 x 1.2 mm (1.44 mm) very low leakage current: 0.1 A max high reliability offered by monolithic integration Figure 1. Pin configuration (bump side) high reduction of parasitic elements through 3 2 1 integration and wafer level packaging A Complies with the following standards: IEC 61000-4-2 Level 4: 15 kV (air discharge) B 8 kV (contact discharge) IEC 61000-4-2 Level 1: C 2 kV (air discharge) 2 kV (contact discharge) Figure 2. Schematic Applications A1 A2 A3 B1 B3 C1 C2 C3 Where transient overvoltage protection in ESD sensitive equipment is required using high speed differential interfaces: mobile phones portable navigation devices portable multimedia players Description B2 The ESDAULC6-8F3 is a monolithic application specific discrete device dedicated to ESD protection of high speed differential interfaces. This device is ideal for applications where both TM: HDMI, the HDMI logo and High-Definition Multimedia reduced print circuit board space and power Interface are trademarks or registered trademarks of HDMI Licensing LLC. absorption capability are required. October 2010 Doc ID 16859 Rev 2 1/8 www.st.com 8Characteristics ESDAULC6-8F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD IEC 61000-4-2, level 4 - on all pins: V Air discharge 15 kV PP Contact discharge 15 T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to + 150 C stg Figure 3. Electrical characteristics - definitions I Symbol Parameter V = Breakdown voltage BR I = Leakage current V V V BR RM RM RM V I RM V = Stand-off voltage RM I R I = Breakdown current R Table 2. Electrical characteristics (T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 6 10 V BR R I V = 3 V per line 3 100 nA RM RM C V = 0 V, V = 30 mV, F = 1 MHz 1.2 pF I/O-GND line osc 2/8 Doc ID 16859 Rev 2