ESDAULC6-3BP6 ESDAULC6-3BF2 ESD protection for high speed interface Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers SOT-666 Flip-Chip Communication systems ESDAULC6-3BP6 ESDAULC6-3BF2 Cellular phones handsets and accessories Video equipment Figure 1. Functional diagram A B Features 1 I/O1 6 GND I/O1 GND 1 Ultra low capacitance 1.25 pF max. 2 5 NC NC Bi-directional protection 34 I/O3 I/O2 RoHS package I/O2 I/O3 2 Top view Bump side view Description ESDAULC6-3BP6 ESDAULC6-3BF2 The ESDAULC6-3Bxx is a monolithic application specific discrete device dedicated to ESD Figure 2. Pin configuration protection of high speed interfaces such as I/O1 I/O2 I/O3 USB2.0. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Benefits GND Ultra low capacitance bidirectional ESD Table 1. Order codes protection Part number Marking Low PCB space consumption: 2 2 2.5 mm max footprint (1.7 mm for Flip-Chip) ESDAULC6-3BP6 3 Enhanced ESD protection: ESDAULC6-3BF2 3B 15 kV contact discharge Complies with the following standards: 15 kV air discharge IEC 61000-4-2 level 4: No insertion loss to 3.0 GHz 8 kV (contact discharge) Ultra low leakage current 15 kV (air discharge) High reliability offered by monolithic integration MIL STD 883G-Method 3015-7: class 3B HBM (Human Body Model) July 2007 Rev 1 1/11 www.st.com 11Characteristics ESDAULC6-3BP6, ESDAULC6-3BF2 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value (min.) Unit IEC 61000-4-2 contact discharge 15 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 T Maximum operating junction temperature 150 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s at 5 mm for case 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 3. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL V V V CL BR RM V I Leakage current RM I RM V V V RM BR CL I Peak pulse current PP T Voltage temperature coefficient Slope: 1/R d C Capacitance IPP R Dynamic resistance d Parameter Test condition Min Typ Max Unit (1) V I = 1 mA 6.0 9.2 V BR R I V = 5 V 0.5 A RM RM R Square pulse, I = 6 A, t = 2.5 s 1.4 d PP p -4 T 1.2 10 /C SOT-666 1.0 1.25 V = 0 V, I/O F = 1 MHz, V = 30 mV OSC Flip-Chip 1.25 1.5 C pF i/o-i/o SOT-666 0.75 0.9 V = 1.65 V, V = 4.3 V, I/O CC F = 1 MHz, V = 400 mV OSC Flip-Chip 0.9 1.20 1. Same value for I/O to I/O and I/O to GND 2/11