Product Information

RZQ045P01TR

RZQ045P01TR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET P Chan-12V-4.5A 1.5V Drive
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.338 ea
Line Total: USD 0.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.3301

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.8477
10 : USD 0.7249
100 : USD 0.5554
500 : USD 0.439
1000 : USD 0.3512

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.338
5 : USD 0.3259
50 : USD 0.3078
250 : USD 0.2595
1000 : USD 0.2378
2500 : USD 0.2329

0 - WHS 4


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.3216
6000 : USD 0.3156
9000 : USD 0.3097
24000 : USD 0.3049

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) High power package. 0~0.1 (1) (2) (3) 3) Low voltage drive. (1.5V) 1pin mark 0.16 0.4 Each lead has same dimensions z Applications Abbreviated symbol : YG Switching z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RZQ045P01 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS 10 V Continuous ID 4.5 A Drain current 1 Pulsed IDP 12 A Source current Continuous IS 1 A 1 (Body diode) Pulsed ISP 12 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. 1/5 1.6 2.8 0.3~0.6RZQ045P01 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 12V, VGS=0V Gate threshold voltage V 0.3 1.0 V V = 6V, I = 1mA GS (th) DS D 25 35 m ID= 4.5A, VGS= 4.5V 31 43 m ID= 2.2A, VGS= 2.5V Static drain-source on-state R DS (on) resistance 39 58 m I = 2.2A, V = 1.8V D GS 50 100 m ID= 0.9A, VGS= 1.5V Forward transfer admittance Yfs 6.5 SVDS= 6V, ID= 4.5A Input capacitance C 2450 pF V = 6V iss DS Output capacitance Coss 320 pF VGS=0V Reverse transfer capacitance Crss 290 pF f=1MHz Turn-on delay time t 12 ns ID= 2.2A d (on) VDD 6V Rise time tr 75 ns VGS= 4.5V Turn-off delay time td (off) 390 ns RL 2.7 Fall time t 215 ns RG=10 f Total gate charge Qg 31 nC VDD 6V RL 1.3 Gate-source charge Qgs 4.5 nC VGS= 4.5V RG=10 Gate-drain charge Q 4.0 nC I = 4.5A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 4.5A, VGS=0V Pulsed 2/5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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