Product Information

RSC002P03T316

RSC002P03T316 electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3013 ea
Line Total: USD 0.3

7792 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0399

7792 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.3013
10 : USD 0.2036
100 : USD 0.084
1000 : USD 0.0587
3000 : USD 0.0425
9000 : USD 0.0403
24000 : USD 0.0379
45000 : USD 0.0368
99000 : USD 0.0345

5820 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 834
Multiples : 1
834 : USD 0.1077
1000 : USD 0.1054

1354 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 834
Multiples : 1
834 : USD 0.1117

7159 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 616
Multiples : 1
616 : USD 0.0621
1000 : USD 0.0571
2000 : USD 0.0553
3000 : USD 0.0549

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Transistor Type
Brand
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Data Sheet 4V Drive Pch MOSFET RSC002P03 Structure Dimensions (Unit : mm) SST3 Silicon P-channel MOSFET <SOT-23> Features 1) Low on-resistance. 2) Low-voltage drive (4V). Abbreviated symbol : WP Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T316 Basic ordering unit (pieces) 3000 1 RSC002P03 2 (1) Source (2) (1) (2) Gate 1 BODY DIODE (3) Drain 2 ESD PROTECTION DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 0.25 A D Drain current *1 Pulsed I 0.5 A DP *2 Power dissipation P 0.2 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on recommended land-pattern. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 625 C / W * Mounted on recommended land-pattern. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/5Data Sheet RSC002P03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1- 2.5 V V =10V, I =1mA GS (th) DS D - 0.9 1.4 I =0.25A, V =10V D GS Static drain-source on-state * R DS (on) - 1.4 2.1 I =0.15A, V =4.5V D GS resistance - 1.6 2.4 I =0.15A, V =4V D GS ** Forward transfer admittance l Y l 0.2 - - S V =10V, I =0.15A fs DS D Input capacitance C - 30 - pF V =10V iss DS Output capacitance C - 10 - pF V =0V oss GS Reverse transfer capacitance C - 5 - pF f=1MHz rss Turn-on delay time t -4 - nsV 15V, I =0.15A ** d(on) DD D Rise time t -6 - nsV =10V r ** GS Turn-off delay time t - 20 - ns R 100 ** d(off) L Fall time t - 23 - ns R =10 ** f G *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =0.1A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.08 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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