Product Information

RPT-38PT3F

RPT-38PT3F electronic component of ROHM

Datasheet
ROHM Semiconductor Phototransistors CLEAR PHOTOTRANS VISIBLE RAY CUT

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0841 ea
Line Total: USD 1.08

576 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9326
10 : USD 0.6111
100 : USD 0.4224
500 : USD 0.4165
1000 : USD 0.3489
2000 : USD 0.3216
10000 : USD 0.3097
24000 : USD 0.3037
50000 : USD 0.3026

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Maximum On-State Collector Current
Mounting Style
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Dark Current
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Type
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Half Intensity Angle Degrees
Hts Code
Mxhts
Product Type
Subcategory
Taric
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RPT-38PT3F Sensors Phototransistor, top view type RPT-38PT3F RPT-38PT3F is photo transistor of the top view type. Molded with transparent resin, and can be used for visible light source. Also, can be used for illuminance sensor. z External dimensions (Unit : mm) z Application Optical control equipment Illuminance sensor. Notes: 1. Unspecified tolerance +0.1 shall be 0.2 . 3.4 0.3 2. Dimension in parenthesis are 3.10.2 show for reference. z Features 1) High sensitivity. 40.6 2) It can be used for visible light source. 2 0.5 2 1 Internal connection diagram (2.5) 1 2 Emitter Collector z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-emitter voltage VCEO 32 V Emitter-collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +100 C z Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Light current IC 2.0 mA VCE=5V, E=500LX Dark current ICEO 0.5 A VCE=10V(Black box) Peak sensitivity wavelength P 800 nm Collector-emitter saturation voltage VCE(sat) 0.4 V IC=1mA, E=500LX Half-angle 1 / 2 36 deg Response time trtf 10 s VCC=5V, IC=1mA, RL=100 1/2 Max.1 1.1 2.51 Min.24 5.20.3RPT-38PT3F Sensors z Electrical and optical characteristic curves 1000 8 VCE=5V 500 1000 6 100 200 VCE=10V VCE=20V 100 4 VCE=30V 10 50 1 2 20 0.1 10 25 0 25 50 75 100 0 250 500 750 1000 1250 25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (C) ILLUMINANCE : E (Lx) AMBIENT TEMPERATURE : Ta (C) Fig.2 Relative output Fig.3 Light current vs. irradiance Fig.1 Dark current vs. ambient temperature vs. ambient temperature 120 10 100 160 8 E=1000Lux 80 120 6 750Lux 60 80 4 500Lux 40 40 2 250Lux 20 0 0 0 02 4 6 8 10 12 14 16 400 600 800 1000 25 0 25 50 75 100 COLLECTOREMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature 1000 0 10 Ta=25C 100 20 VCE=5V 30 40 80 100 50 60 RL=1k 60 40 RL=500 10 70 20 RL=100 80 1 90 0.1 110 100 80 60 40 20 10 20 30 40 50 60 70 80 90 0 COLLECTOR CURRENT : IC (mA) RELATIVE LUMINOUS INTENSITY (%) ANGULAR DISPLACEMENT (deg) Fig.7 Response time vs. Fig.8 Directional pattern collector current 2/2 LIGHT CURRENT : IC (mA) DARK CURRENT : ICEO (nA) RESPONSE TIME : tr (s) RELATIVE SENSITIVITYT : IC (%) RELATIVE LIGHT CURRENT : IC (%) LIGHT CURRENT : IC (mA) COLLECTOR DISSIPATION : PC (mW) RELATIVE LUMINOUS INTENSITY (%)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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