Product Information

RB751V-40TE-17

RB751V-40TE-17 electronic component of ROHM

Datasheet
ROHM Semiconductor Schottky Diodes & Rectifiers SCHOTTKY 40V 30MA
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

325: USD 0.1179 ea
Line Total: USD 38.32

49448 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 325  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29100 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 329
Multiples : 1
329 : USD 0.2803
500 : USD 0.2727
1000 : USD 0.2661
2500 : USD 0.2601
5000 : USD 0.2549

38131 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 329
Multiples : 1
329 : USD 0.2803
500 : USD 0.2727
1000 : USD 0.2661
2500 : USD 0.2601
5000 : USD 0.2549

49448 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 325
Multiples : 1
325 : USD 0.1179
500 : USD 0.1173
1000 : USD 0.0954
2000 : USD 0.0893
3000 : USD 0.0887
6000 : USD 0.0863
12000 : USD 0.0823

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Package Case
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

RB751V-40 Diodes Schottky barrier diode RB751V-40 z Applications z External dimensions (Unit : mm) z Land size figure Low current rectification 1.250.1 0.10.1 0.05 0.9MIN. z Features 1) Ultra small mold type. (UMD2) 2) Low VF 3) High reliability UMD2 z Construction z Structure 0.70.2 0.30.05 0.1 Silicon epitaxial planar ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 40 V RM Reverse voltage (DC) 30 V V R Average rectified forward current 30 Io m A Forward current surge peak 60Hz 1cyc I 200 mA FSM Junction tem perature Tj 125 Storage tem perature -40 to +125 Tstg z Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V -- 0.37 V I =1mA F F Reverse current I -- 0.5 A V =30V R R Capacitance between term inal Ct - 2 - pF V =1V , f=1MHz R Rev.B 1/3 Not Recommended for New Designs 1.70.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 0.8MIN. 2.80.1 2.1RB751V-40 Diodes z Electrical characteristic curves 10 100 1000 Ta=125 Ta=125 f=1MHz 100 10 Ta=75 Ta=75 10 1 Ta=25 1 1 Ta=-25 0.1 Ta=25 Ta=-25 0.1 0.01 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 102030 0 102030 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS VF 10 1000 300 Ta=25 900 9 Ta=25 Ta=25 VR=30V IF=1mA 800 8 290 f=1MHz n=30pcs n=30pcs VR=1V 700 7 n=10pcs 600 6 280 500 5 400 270 4 AVE:1.97pF 300 3 260 200 2 AVE:267.4mV 100 1 AVE:185.5nA 250 0 0 VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 9 Ifsm Ifsm 1cyc Ifsm 8 15 t 15 8.3ms 8.3ms 7 8.3ms 1cyc 6 10 10 5 4 AVE:7.30A 3 5 5 2 1 0 0 0 1 10 100 1 10 100 NUMBER OF CYCLES TIME:t(ms) IFSM DISPERSION MAP IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS 0.04 0.003 1000 Rth(j-a) Rth(j-c) 0.03 D=1/2 0.002 100 Sin(180) 0.02 D=1/2 Mounted on epoxy board DC IM=10mA IF=100mA DC 0.001 10 Sin(180) 0.01 time 1ms 300us 0.00 0 1 0.00 0.01 0.02 0.03 0.04 0.05 0.001 0.1 10 1000 010 20 30 TIME:t(s) AVERAGE RECTIFIED Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) FORWARD CURRENT Io(A) VR-P CHARACTERISTICS R Io-Pf CHARACTERISTICS Rev.B 2/3 Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:VF(mV) TRANSIENT FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER REVERSE CURRENT:IR(uA) DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT:IR(nA) FORWARD CURRENT:IFSM(A) REVERSE POWER PEAK SURGE DISSIPATION:P (W) R CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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