Product Information

ECG040BTRG

ECG040BTRG electronic component of Qorvo

Datasheet
ECG040BTRG triquint semiconductor amplifier rf integrated circuits ics semiconductors

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.7926 ea
Line Total: USD 1792.6

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1000
1000 : USD 1.7926

     
Manufacturer
Product Category
RoHS - XON
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ECG040B InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The ECG040B is a general-purpose buffer amplifier that DC 4 GHz offers high dynamic range in a low-cost surface-mount 4 +18.5 dBm P1dB at 1 GHz package. At 1 GHz, the ECG040B typically provides 15.8 dB of gain, +35 dBm Output IP3, and +18.5 dBm P1dB. +35 dBm OIP3 at 1 GHz 16 dB Gain at 1 GHz The ECG040B consists of Darlington pair amplifiers using 5.5 dB Noise Figure the high reliability InGaP/GaAs HBT process technology 1 2 3 and only requires DC-blocking capacitors, a bias resistor, Available in Lead-free / green and an inductive RF choke for operation. The device is RF IN GND RF OUT SOT-89 Package Style ideal for wireless applications and is available in a low- Internally matched to 50 cost, surface-mountable lead-free/green/RoHS-compliant Function Pin No. SOT-89 package. All devices are 100% RF and DC tested. Input 1 Output/Bias 3 Applications The broadband MMIC amplifier can be directly applied to Ground 2, 4 various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG040B will work for other various applications CATV / FTTX within the DC to 4 GHz frequency range such as CATV W-LAN / ISM and mobile wireless. RFID WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 4000 Frequency MHz 500 900 1900 2140 S21 dB 16.0 15.8 15.3 15.1 Test Frequency MHz 1000 S11 dB -24 -24 -23 -21 Gain dB 15.8 S22 dB -27 -23 -16 -16 Output P1dB dBm +18.5 (2) Output P1dB dBm +18.5 +18.5 +18 +19 Output IP3 dBm +35 (2) Output IP3 dBm +35.5 +35 +34.5 +30.5 Test Frequency MHz 2000 Noise Figure dB 4.6 5.5 5.8 3.8 Gain dB 12.8 15.3 17.5 Input Return Loss dB 22 Output Return Loss dB 16 Output P1dB dBm +18 (2) Output IP3 dBm +35 Noise Figure dB 5.5 Device Voltage V 4.8 Device Current mA 70 Not Recommended For 1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +6 V, Rbias = 16 , 50 System. New Designs 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Recommended replacement parts: AG603-89G Absolute Maximum Rating Parameter Rating Storage Temperature -65 to +150 C Ordering Information RF Input Power (continuous) +12 dBm Device Current 130 mA Part No. Description Junction Temperature +160 C InGaP HBT Gain Block ECG004B-G Thermal Resistance, Rth 128 C/W (lead-free/green/RoHS-compliant SOT-89 package) Operation of this device above any of these parameters may cause permanent damage. Standard T/R size = 1000 pieces on a 7 reel. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www. TriQuint.com Page 1 of 4 August 2011 ECG040B InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V, R = 16 , I = 70 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 S21 dB 16.2 16.0 15.8 15.3 15.1 14.8 13.9 S11 dB -23 -24 -24 -23 -21 -20 -17 S22 dB -32 -27 -23 -16 -16 -15 -11 Output P1dB dBm +18.4 +18.5 +18 +18 +18 +18 +17.5 Output IP3 dBm +35.6 +35.5 +35 +33.2 +32.9 +32.4 Noise Figure dB 4.6 4.7 4.9 5.1 5.3 5.4 1. Test conditions: T = 25 C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 16 , Icc = 70 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain Return Loss Icc vs. Vcc 18 0 200 180 16 160 -10 140 14 120 -20 100 25C 12 80 60 -30 10 40 S11 S22 20 -40 8 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Vcc (V) Frequency (GHz) Frequency (GHz) OIP3 vs. Frequency Noise Figure vs. Frequency P1dB vs. Frequency 40 6 24 22 5 35 20 4 30 18 16 3 25 14 25C 85C -40C 25C 85C -40C 2 20 12 500 1000 1500 2000 500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www. TriQuint.com Page 2 of 4 August 2011 G a in (d B ) OIP3 (dBm) NF (dB) S 11 , S 2 2 (d B ) P1dB (dBm) Icc (mA)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD
RFMD (Qorvo)
TriQuint
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TRIQUINT SEMI
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