Product Information

NV25080MUW2VTAG

NV25080MUW2VTAG electronic component of ON Semiconductor

Datasheet
EEPROM 8KB SPI SER CMOS EEPROM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.5748 ea
Line Total: USD 1724.4

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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NV25080MUW2VTAG
ON Semiconductor

1 : USD 0.5339
10 : USD 0.5257
100 : USD 0.4426
500 : USD 0.4378
1000 : USD 0.4259
3000 : USD 0.4081
9000 : USD 0.3868
24000 : USD 0.3773
45000 : USD 0.3571

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Qualification
Packaging
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Operating Supply Current
Operating Supply Voltage
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EEPROM Serial 8/16-Kb SPI - Automotive Grade 1 in Wettable Flank UDFN8 Package NV25080MUW, www.onsemi.com NV25160MUW Description 1 1 The NV25080/25160 are EEPROM Serial 8/16 Kb SPI Automotive Grade 1 devices internally organized as 1024x8/2048x8 UDFN8 (2x2) UDFN8 (2x3) (Wettable Flank) (Wettable Flank) bits. They feature a 32byte page write buffer and support the Serial MUW2 SUFFIX MUW3 SUFFIX Peripheral Interface (SPI) protocol. The device is enabled through a CASE 517AW CASE 517DH Chip Select (CS) input. In addition, the required bus signals are a clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the PIN CONFIGURATIONS NV25080/25160 device. These devices feature software and hardware write protection, including partial as well as full array protection. V CS 1 CC SO HOLD Features WP SCK Automotive AECQ100 Grade 1 (40C to +125C) Qualified V SI SS 10 MHz SPI Compatible UDFN8 (MUW2, MUW3) 1.8 V to 5.5 V Supply Voltage Range (Top View) SPI Modes (0,0) & (1,1) PIN FUNCTION 32byte Page Write Buffer Selftimed Write Cycle Pin Name Function Hardware and Software Protection CS Chip Select Block Write Protection SO Serial Data Output Protect 1/4, 1/2 or Entire EEPROM Array WP Write Protect Low Power CMOS Technology V Ground SS 1,000,000 Program/Erase Cycles SI Serial Data Input 100 Year Data Retention SCK Serial Clock Industrial and Extended Temperature Range HOLD Hold Transmission Input 8Pad Wettable Flank UDFN8 Packages These Devices are PbFree, Halogen Free/BFR Free, and RoHS V Power Supply CC Compliant V CC ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. SI CS NV25080MUW NV25160MUW SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2020 Rev. 4 NV25080MUW/DNV25080MUW, NV25160MUW Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Unit Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Unit N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. DC OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Unit I Supply Current (Read Mode) Read, V = 5.5 V, 5 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 5 MHz, SO open 3 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage V 2.5 V 0.5 0.3 V V IL1 CC CC V Input High Voltage V 2.5 V 0.7 V V + 0.5 V IH1 CC CC CC V Input Low Voltage V < 2.5 V 0.5 0.2 V V IL2 CC CC V Input High Voltage V < 2.5 V 0.8 V V + 0.5 V IH2 CC CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC Table 4. PIN CAPACITANCE (T = 25C, f = 1.0 MHz, V = +5.0 V) (Note 2) A CC Symbol Test Conditions Min Typ Max Unit C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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