Product Information

CAT25640HU4I-GT3

CAT25640HU4I-GT3 electronic component of ON Semiconductor

Datasheet
ON Semiconductor EEPROM 64KB SPI SER CMOS EEPROM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6668 ea
Line Total: USD 0.67

2477 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5167 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

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CAT25640HU4I-GT3
ON Semiconductor

1 : USD 1.3396
10 : USD 1.1382
30 : USD 1.0273
100 : USD 0.9025
500 : USD 0.7575
1000 : USD 0.7313

2477 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

CAT25640HU4I-GT3
ON Semiconductor

1 : USD 0.6668
10 : USD 0.6063
100 : USD 0.5529
500 : USD 0.5446
1000 : USD 0.5257
3000 : USD 0.4995
6000 : USD 0.4889
9000 : USD 0.4817
24000 : USD 0.4794

     
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RoHS - XON
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CAT25640 EEPROM Serial 64-Kb SPI Description The CAT25640 is a EEPROM Serial 64Kb SPI device internally organized as 8Kx8 bits. This features a 64byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus www.onsemi.com signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25640 device. The device features software and hardware write protection, including partial as well as full array protection. SOIC8 UDFN8 TSSOP8 V SUFFIX HU4 SUFFIX Y SUFFIX Features CASE 751BD CASE 517AZ CASE 948AL 20 MHz (5 V) SPI Compatible 1.8 V to 5.5 V Supply Voltage Range PIN CONFIGURATION SPI Modes (0,0) & (1,1) 1 CS 64byte Page Write Buffer V CC Selftimed Write Cycle SO HOLD Hardware and Software Protection WP SCK Block Write Protection V SI SS 1 1 Protect / , / or Entire EEPROM Array 4 2 SOIC (V), TSSOP (Y), UDFN (HU4) Low Power CMOS Technology 1,000,000 Program/Erase Cycles 100 Year Data Retention PIN FUNCTION Industrial and Extended Temperature Range Pin Name Function SOIC, TSSOP 8lead and UDFN 8pad Packages CS Chip Select This Device is PbFree, Halogen Free/BFR Free, and RoHS SO Serial Data Output Compliant WP Write Protect V CC V Ground SS SI Serial Data Input SI SCK Serial Clock CS HOLD Hold Transmission Input CAT25640 SO WP V Power Supply CC HOLD SCK ORDERING INFORMATION See detailed ordering and shipping information in the package V SS dimensions section on page 13 of this data sheet. Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2018 Rev. 11 CAT25640/DCAT25640 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, V = 5.5 V, mA 10 MHz / 40C to 85C 2 CCR CC (Read Mode) SO open 5 MHz / 40C to 125C 2 I Supply Current Write, V = 5.5 V, 10 MHz / 40C to 85C 3 mA CCW CC (Write Mode) SO open 5 MHz / 40C to 125C 3 I Standby Current V = GND or V , CS = V , T = 40C to +85C 1 A SB1 IN CC CC A WP = V , V = 5.5 V CC CC T = 40C to +125C 2 A I Standby Current V = GND or V , CS = V , T = 40C to +85C 3 A SB2 IN CC CC A WP = GND, V = 5.5 V CC T = 40C to +125C 5 A I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V < 2.5 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V < 2.5 V, I = 100 A V 0.2 V V OH2 CC OH CC www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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