Product Information

BTA25-800CW3G

BTA25-800CW3G electronic component of ON Semiconductor

Datasheet
Triacs ISO TO220 25A 35mA TRIAC

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.402 ea
Line Total: USD 6.4

924 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
834 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BTA25-800CW3G
ON Semiconductor

1 : USD 4.508
10 : USD 3.7835
25 : USD 3.5765
100 : USD 3.0705
250 : USD 2.898
500 : USD 2.7255
1000 : USD 2.323
2000 : USD 2.1965
5000 : USD 2.1045

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors 25A Alternistor Triac Pb BTA25-600CW3G, BTA25-800CW3G Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking Voltage to 800 V Industry Standard TO- 220AB Package On-State Current Rating of 25 A RMS at 25C High Commutating dI/ dt 14 A/ms minimum at Uniform Gate Trigger 125C Currents in Three Quadrants Internally Isolated (2500 V ) High Immunity to dV/ RMS dt 500 V/s minimum at These are PbFree 125C Devices and are RoHS Compliant Minimizes Snubber Networks for Protection Pin Out Functional Diagram MT2 MT1 3 G TO-220AB Case 221 A Style 4 1 2 Additional Information 3 Samples Datasheet Resources 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20Thyristors 25A Alternistor Triac Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTA25600CW3G V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) BTA25800CW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 95C) I 25 A C T (RMS) Peak Non-Repetitive Surge Current I 250 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 260 Asec V / V DSM RSM NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 8.3 ms) V / V V J DSM RSM +100 Peak Gate Current (T = 110C, t 20s) I 4.0 W J GM Peak Gate Power (Pulse Width 20 s, T = 80C) P 20 W C G(AV) Average Gate Power (T = 110C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg RMS Isolation Voltage (t = 300 ms, R.H. 30%, T = 25C) V 2500 V A iso Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.13 JC Thermal Resistance, C/W JunctiontoAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.005 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 110C I - - 2.0 D DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = 22.5 A Peak) V 1.55 V TM TM MT2(+), G(+) 2.0 35 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) MT2(+), G() I 2.0 35 mA D L GT MT2(), G() 2.0 35 Holding Current IH 50 mA (V = 12 V, Gate Open, Initiating Current = 500 mA) D MT2(+), G(+) 75 Latching Current (V = 12 V, I = 12 mA) MT2(+), G() IL 75 mA D G MT2(), G() 75 MT2(+), G(+) 0.5 1.3 Gate Trigger Voltage (V = 12 V, R = 30 ) MT2(+), G() V 0.5 1.3 V D L GT MT2(), G() 0.5 1.3 MT2(+), G(+) 0.2 Gate NonTrigger Voltage (T = 110C) MT2(+), G() V 0.2 V J GD MT2(), G() 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/03/20

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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