The 2N7002LT1G is a N-channel, upgrade-enhanced, logic-level, 60V, 115mA MOSFET designed and manufactured by ON Semiconductor. It is packaged in a tiny SOT-23, allowing it to be integrated into a variety of applications, including portable devices. The device features dual-gate protection against Electrostatic Discharge (ESD) and is suitable for switching and linear applications. It features an ultra-low input capacitance and fast switching response. The low threshold voltage and on resistance of the 2N7002LT1G make it ideal for low voltage applications. The maximum drain current of the device is 115mA and the drain-source breakdown voltage is 60V. The device can also operate at temperatures ranging from -55C to 150C. Overall, the 2N7002LT1G is an excellent choice for low voltage switching and linear applications.